HABUKA Hitoshi

Organization

Faculty of Engineering, Division of Materials Science and Chemical Engineering

Title

Professor

Date of Birth

1957

Research Fields, Keywords

Electronics materials, Crystal Growth, Etching, Silicon, Silicon Carbide, Surface, Reactor, Process, Cleaning, Heating technology

Mail Address

E-mail address



The Best Research Acheivement as Researcher Life 【 display / non-display

  • 【Published Thesis】 Model on Transport Phenomena and Epitaxial Growth of Silicon Thin Film in SiHCl3-H2 System under Atmospheric Pressure,  1996

    【Published Thesis】 Parallel Langmuir Processes for Silicon Epitaxial Growth in a SiHCl3-SiHx-H2 System  2017

    【Published Thesis】 Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor  2017

Graduating School 【 display / non-display

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    -
    1979

    Niigata University   Faculty of Science   Department of chemistry   Graduated

Graduate School 【 display / non-display

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    1996

    Hiroshima University  Graduate School, Division of Engineering  Department of chemical engineering  Doctor Course  Completed

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    1981

    Kyoto University  Graduate School, Division of Natural Science  Department of chemistry  Master Course  Completed

External Career 【 display / non-display

  • 1986.04
    -
    2000.03

    Shin-Etsu Chemical Co.,   Ltd. Isobe R&D Center  

Academic Society Affiliations 【 display / non-display

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    Electrochemical Society

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    American chemical Society

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Reaction engineering/Process system

  • Applied materials

 

Research Career 【 display / non-display

  • SiC Crystal production technology

    The Other Research Programs  

    Project Year:  -   

  • Analysis and development of cleaning equipment

    Project Year:  -   

  • Adsorption and contamination of various molecules

    Project Year:  -   

  • Heat quipment using radiation (Infrared, etc)

    The Other Research Programs  

    Project Year:  -   

  • Chemical processes on silicon surface

    Cooperative Research  

    Project Year:  -   

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Books 【 display / non-display

  • Polycrystalline Films

    Hitoshi Habuka (Part: Joint Work )

    Nova Publisher  2017 ISBN: 9781536108187

  • Silicon Epitaxial Reactor for Minimal Manufacturing

    Hitoshi Habuka (Part: Single Work )

    "Epitaxy" Editor Miao Zhong  2017 ISBN: 9789535152514

  • Advances in Medicine and Biology

    Samar Soliman, Lavanya Elangovan, Yong Du, and Chandra Mohan, Parthasarathy Arumugam and Joon Myong Song, Xiu Liu and Yongzhen Gong, Ana Pilipović and MihaljPoša, Hitoshi Habuka, Spyridoula N. Papoutsi, Barbara Wolgamuth, Michelangelo Maestri, Enrica Bonanni, Nicholas-Tiberio Economou, Mélissa Simard, Isabelle Lorthois, Maxim Maheux, Bryan Roy, Louis-Charles Masson, Alexandre Morin, and Roxane Pouliot, Natavudh Townamchai and Somchai Eiam-Ong (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.09 ISBN: 9781634855679

     View Summary

    固体表面に吸着脱離する有機物分子の挙動を水晶振動子を用いてその場測定し、解析する方法を解説した。特に、有機物分子間に相互作用が生じる場合について詳述した。

  • Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

    Hitoshi Habuka (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    InTech  2016.09 ISBN: 9789535125730

     View Summary

    化学気相堆積法において生起する熱、流れ、堆積などの諸現象を、ランガサイト結晶振動子を用いてその場観察する方法と解釈方法について紹介し、その結果を解説した。

  • Advances in Materials Science Research

    Giuseppe Acciani, Hitoshi Habuka, Yuji Aoki, Masataka SugimotoYunxiang Tong, Yufeng Zheng, Li Li, Dmitry V. Gunderov, Min-Chie Chiu, Long-Jyi Yeh, Yao-Jen Lai, Mariyam Adnan, J. Jeyakodi Moses (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.08 ISBN: 9781634831819

     View Summary

    三フッ化塩素を用いた炭化珪素結晶エッチング技術により、CVD装置クリーニングを始めとするプロセス技術研究の全体像と最先端の内容を解説した。

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Papers 【 display / non-display

  • Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

    Hitoshi Habuka,Mitsuko Muroi,Miya Matsuo,Yuuki Ishida,Shiro Hara,Shin-Ichi Ikeda

    Materials Science in Semiconductor Processing   88   192 - 197   2018.12  [Refereed]

    Joint Work

    DOI

  • Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

    Yuuki Ishida,Shin-Ichi Ikeda,Shiro Hara,Hitoshi Habuka,Kenta Irikura,Mitsuko Muroi,Ayami Yamada,Miya Matsuo

    Materials Science in Semiconductor Processing   87   13 - 18   2018.11  [Refereed]

    Joint Work

    DOI

  • Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases

    Ayami Yamada, Mitsuko Muroi, Toru Watanabe, Ayumi Saito, Ayumi Sakurai and Hitoshi Habuka

    Semiconductor Science and Technology   33 ( 9 )   2018.07  [Refereed]

    Joint Work

    DOI

  • Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

    Miya Matsuo,Kento Miyazaki,Hitoshi Habuka,Akihiro Goto

    ECS Journal of Solid State Science and Technology   7 ( 9 )   N123 - N127   2018  [Refereed]

    Joint Work

    DOI

  • Parallel langmuir processes for silicon epitaxial growth in a SiHCl3-SiHX-H2 system

    Toru Watanabe, Ayami Yamada, Ayumi Saito, Ayumi Sakurai, Hitoshi Habuka

    Materials Science in Semiconductor Processing   72   134 - 138   2017.12  [Refereed]

    Joint Work

    DOI

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Review Papers 【 display / non-display

  • 化学工学辞典

    化学工学会(2006)     2006

    Introduction and explanation (others)   Joint Work

Works 【 display / non-display

  • Patent on measurement method for organic species concentration

    Other 

    2000
     
     
     

  • Patent surface cleaning Process of silicon

    Other 

    1999
     
     
     

  • Patent on Surface condition for crystal growth

    Other 

    1997
     
     
     

  • Patent on process for obtaining uniform thickness of crystal film

    Other 

    1996
     
     
     

  • Patent on producing light emitting cliodes

    Other 

    1989
     
     
     

Grant-in-Aid for Scientific Research 【 display / non-display

  • Grant-in-Aid for Scientific Research(C)

    Project Year: 2006.04  -  2008.03 

Presentations 【 display / non-display

  • Increase in Silicon Film Deposition Rate in a SiHCl3-SiHx-H2 System

    A. Saito, A. Yamada, A. Sakurai and H. Habuka

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • Transport Phenomena in a Slim Vertical CVD Reactor for Minimal Manufacturing

    A. Yamada, N. Li, M. Matsuo, H. Habuka, Y. Ishida, S. Ikeda and S. Hara

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • In Situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

    Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

    Asumi Hirooka, Hitoshi Habuka, Tomohisa Kato

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • Numerical evaluation of silicon epitaxial growth for 450mm Ø substrate

    M. Matsui and H. Habuka

    EuroCVD20  (Sempach, Switzerland)  2015.07  

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Preferred joint research theme 【 display / non-display

  • Study on Reactors for Crystal Growth for producing electronics materials

Past of Collaboration and Commissioned Research 【 display / non-display

  • Etching technology for etching various materials

    Cooperative Research within Japan  

    Project Year: 2004.11  -  2007.03 

  • Analysis of transport phenomena in a thin film formation reactor

    Cooperative Research within Japan  

    Project Year: 2004.04  -  2007.03 

  • Semiconductor epitaxial growth reactor technology

    Funded Research offered by Enterprises  

    Project Year: 2001.07  -  2001.12