HABUKA Hitoshi

Affiliation

Faculty of Engineering, Division of Materials Science and Chemical Engineering

Job Title

Professor

Date of Birth

1957

Research Fields, Keywords

Electronics materials, Crystal Growth, Etching, Silicon, Silicon Carbide, Surface, Reactor, Process, Cleaning, Heating technology

Mail Address

E-mail address



ORCID  https://orcid.org/0000-0001-9931-5915

The Best Research Achievement in Research Career 【 display / non-display

  • 【Published Thesis】 Model on Transport Phenomena and Epitaxial Growth of Silicon Thin Film in SiHCl3-H2 System under Atmospheric Pressure,  1996

    【Published Thesis】 Parallel Langmuir Processes for Silicon Epitaxial Growth in a SiHCl3-SiHx-H2 System  2017

    【Published Thesis】 Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor  2017

Graduating School 【 display / non-display

  •  
    -
    1979

    Niigata University   Faculty of Science   Department of chemistry   Graduated

Graduate School 【 display / non-display

  •  
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    1996

    Hiroshima University  Graduate School, Division of Engineering  Department of chemical engineering  Doctor Course  Completed

  •  
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    1981

    Kyoto University  Graduate School, Division of Natural Science  Department of chemistry  Master Course  Completed

Campus Career 【 display / non-display

  • 2002.04
    -
    Now

    Duty   Yokohama National UniversityFaculty of Engineering   Division of Materials Science and Chemical Engineering   Professor  

  • 2001.04
    -
    2002.03

    Duty   Yokohama National UniversityFaculty of Engineering   Division of Materials Science and Chemical Engineering   Associate Professor  

  • 2000.04
    -
    2001.03

    Duty   Yokohama National UniversitySchool of Engineering   Associate Professor  

  • 2018.04
    -
    Now

    Concurrently   Yokohama National UniversityGraduate school of Engineering Science   Department of Chemistry, Chemical Engineering and Life Science   Professor  

  • 2011.04
    -
    Now

    Concurrently   Yokohama National UniversityCollege of Engineering Science   Department of Chemistry, Chemical Engineering and Life Science   Professor  

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External Career 【 display / non-display

  • 1986.04
    -
    2000.03

    Shin-Etsu Chemical Co.,   Ltd. Isobe R&D Center  

Academic Society Affiliations 【 display / non-display

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    Electrochemical Society

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    American chemical Society

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Reaction engineering/Process system

  • Applied materials

 

Research Career 【 display / non-display

  • SiC Crystal production technology

    The Other Research Programs  

    Project Year:  -   

  • Analysis and development of cleaning equipment

    Project Year:  -   

  • Adsorption and contamination of various molecules

    Project Year:  -   

  • Heat quipment using radiation (Infrared, etc)

    The Other Research Programs  

    Project Year:  -   

  • Chemical processes on silicon surface

    Cooperative Research  

    Project Year:  -   

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Books 【 display / non-display

  • Polycrystalline Films

    Hitoshi Habuka (Part: Joint Work )

    Nova Publisher  2017 ISBN: 9781536108187

  • Silicon Epitaxial Reactor for Minimal Manufacturing

    Hitoshi Habuka (Part: Single Work )

    "Epitaxy" Editor Miao Zhong  2017 ISBN: 9789535152514

  • Advances in Medicine and Biology

    Samar Soliman, Lavanya Elangovan, Yong Du, and Chandra Mohan, Parthasarathy Arumugam and Joon Myong Song, Xiu Liu and Yongzhen Gong, Ana Pilipović and MihaljPoša, Hitoshi Habuka, Spyridoula N. Papoutsi, Barbara Wolgamuth, Michelangelo Maestri, Enrica Bonanni, Nicholas-Tiberio Economou, Mélissa Simard, Isabelle Lorthois, Maxim Maheux, Bryan Roy, Louis-Charles Masson, Alexandre Morin, and Roxane Pouliot, Natavudh Townamchai and Somchai Eiam-Ong (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.09 ISBN: 9781634855679

     View Summary

    固体表面に吸着脱離する有機物分子の挙動を水晶振動子を用いてその場測定し、解析する方法を解説した。特に、有機物分子間に相互作用が生じる場合について詳述した。

  • Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

    Hitoshi Habuka (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    InTech  2016.09 ISBN: 9789535125730

     View Summary

    化学気相堆積法において生起する熱、流れ、堆積などの諸現象を、ランガサイト結晶振動子を用いてその場観察する方法と解釈方法について紹介し、その結果を解説した。

  • Advances in Materials Science Research

    Giuseppe Acciani, Hitoshi Habuka, Yuji Aoki, Masataka SugimotoYunxiang Tong, Yufeng Zheng, Li Li, Dmitry V. Gunderov, Min-Chie Chiu, Long-Jyi Yeh, Yao-Jen Lai, Mariyam Adnan, J. Jeyakodi Moses (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.08 ISBN: 9781634831819

     View Summary

    三フッ化塩素を用いた炭化珪素結晶エッチング技術により、CVD装置クリーニングを始めとするプロセス技術研究の全体像と最先端の内容を解説した。

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Papers 【 display / non-display

  • Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

    Takahashi Toshinori, Otani Mana, Muroi Mitsuko, Irikura Kenta, Matsuo Miya, Yamada Ayami, Habuka Hitoshi, Ishida Yuuki, Ikeda Shin-Ichi, Hara Shiro

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ( Science Direct )  106   2020.02  [Refereed]

    Joint Work

    Web of Science DOI

  • Anticorrosive Behavior of SiCxNyOz Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

    Watanabe Toru, Hori Kenta, Habuka Hitoshi

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY ( IOP Science )  9 ( 2 )   2020.01  [Refereed]

    Joint Work

    Web of Science DOI

  • Deposition and etching behaviour of boron trichloride gas at silicon surface

    Muroi Mitsuko, Yamada Ayami, Saito Ayumi, Habuka Hitoshi

    JOURNAL OF CRYSTAL GROWTH ( Science Direct )  529   2020.01  [Refereed]

    Joint Work

    Web of Science DOI

  • Electric Current in Rate Equation for Parallel Plate Plasma-Enhanced Chemical Vapour Deposition of SiCxNyOz Film without Heat Assistance

    Kenta Hori, Toru Watanabe and Hitoshi Habuka

    ECS Journal of Solid State Science and Technology ( Electrochemical Society )  9   24017-1 - 24017-6   2020.01  [Refereed]

    Joint Work

     View Summary

    A 50–500 nm-thick SiCxNyOz film was formed in parallel plate plasma at room temperature using a gas mixture of monomethylsilane, nitrogen and argon at 10 - 30 Pa for 5 min at the electric current of 1-16 mA. The film thickness and the concentrations of the silicon, carbon, nitrogen and oxygen were expressed by equations assuming that various chemical reactions in the gas phase and at the surface were enhanced by both the electric current and the partial pressure of the gases. The obtained equations showed the influence of the electric current on the film thickness and the compositions. Using the obtained equations, the existence and the extent of the deposition and the etching by the precursors and their combinations were evaluated.

    DOI

  • Side Wall Water Outlet Design for Silicon Wafer Wet Cleaning Bath

    Miya Matsuo, Toshinori Takahashi, Hitoshi Habuka and Akihiro Goto

    Materials Science in Semiconductor Processing ( Elsevier )  110   104970-1 - 104970-5   2020.01  [Refereed]

    Joint Work

    DOI

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Review Papers 【 display / non-display

  • 化学工学辞典

    化学工学会(2006)     2006

    Introduction and explanation (others)   Joint Work

Works 【 display / non-display

  • Patent on measurement method for organic species concentration

    Other 

    2000
     
     
     

  • Patent surface cleaning Process of silicon

    Other 

    1999
     
     
     

  • Patent on Surface condition for crystal growth

    Other 

    1997
     
     
     

  • Patent on process for obtaining uniform thickness of crystal film

    Other 

    1996
     
     
     

  • Patent on producing light emitting cliodes

    Other 

    1989
     
     
     

Grant-in-Aid for Scientific Research 【 display / non-display

  • Grant-in-Aid for Scientific Research(C)

    Project Year: 2006.04  -  2008.03 

Presentations 【 display / non-display

  • Increase in Silicon Film Deposition Rate in a SiHCl3-SiHx-H2 System

    A. Saito, A. Yamada, A. Sakurai and H. Habuka

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • Transport Phenomena in a Slim Vertical CVD Reactor for Minimal Manufacturing

    A. Yamada, N. Li, M. Matsuo, H. Habuka, Y. Ishida, S. Ikeda and S. Hara

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

    Asumi Hirooka, Hitoshi Habuka, Tomohisa Kato

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • In Situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

    Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • In-situ observation of chemical vapor deposition using SiHCl3 and BCl3 Gases

    A. Saito, K. Miyazaki, M. Matsui and H. Habuka

    EuroCVD20  (Sempach, Switzerland)  2015.07  

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Preferred joint research theme 【 display / non-display

  • Study on Reactors for Crystal Growth for producing electronics materials

Past of Collaboration and Commissioned Research 【 display / non-display

  • Etching technology for etching various materials

    Cooperative Research within Japan  

    Project Year: 2004.11  -  2007.03 

  • Analysis of transport phenomena in a thin film formation reactor

    Cooperative Research within Japan  

    Project Year: 2004.04  -  2007.03 

  • Semiconductor epitaxial growth reactor technology

    Funded Research offered by Enterprises  

    Project Year: 2001.07  -  2001.12