HABUKA Hitoshi


Faculty of Engineering, Division of Materials Science and Chemical Engineering



Date of Birth


Research Fields, Keywords

Electronics materials, Crystal Growth, Etching, Silicon, Silicon Carbide, Surface, Reactor, Process, Cleaning, Heating technology

Mail Address

E-mail address

The Best Research Acheivement as Researcher Life 【 display / non-display

  • 【Published Thesis】 Model on Transport Phenomena and Epitaxial Growth of Silicon Thin Film in SiHCl3-H2 System under Atmospheric Pressure,  1996

    【Published Thesis】 Parallel Langmuir Processes for Silicon Epitaxial Growth in a SiHCl3-SiHx-H2 System  2017

    【Published Thesis】 Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor  2017

Graduating School 【 display / non-display


    Niigata University   Faculty of Science   Department of chemistry   Graduated

Graduate School 【 display / non-display


    Hiroshima University  Graduate School, Division of Engineering  Department of chemical engineering  Doctor Course  Completed


    Kyoto University  Graduate School, Division of Natural Science  Department of chemistry  Master Course  Completed

External Career 【 display / non-display

  • 1986.04

    Shin-Etsu Chemical Co.,   Ltd. Isobe R&D Center  

Academic Society Affiliations 【 display / non-display


    Electrochemical Society


    American chemical Society

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Reaction engineering/Process system

  • Applied materials


Research Career 【 display / non-display

  • SiC Crystal production technology

    The Other Research Programs  

    Project Year:  -   

  • Analysis and development of cleaning equipment

    Project Year:  -   

  • Adsorption and contamination of various molecules

    Project Year:  -   

  • Heat quipment using radiation (Infrared, etc)

    The Other Research Programs  

    Project Year:  -   

  • Chemical processes on silicon surface

    Cooperative Research  

    Project Year:  -   

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Books 【 display / non-display

  • Polycrystalline Films

    Hitoshi Habuka (Part: Joint Work )

    Nova Publisher  2017 ISBN: 9781536108187

  • Silicon Epitaxial Reactor for Minimal Manufacturing

    Hitoshi Habuka (Part: Single Work )

    "Epitaxy" Editor Miao Zhong  2017 ISBN: 9789535152514

  • Advances in Medicine and Biology

    Samar Soliman, Lavanya Elangovan, Yong Du, and Chandra Mohan, Parthasarathy Arumugam and Joon Myong Song, Xiu Liu and Yongzhen Gong, Ana Pilipović and MihaljPoša, Hitoshi Habuka, Spyridoula N. Papoutsi, Barbara Wolgamuth, Michelangelo Maestri, Enrica Bonanni, Nicholas-Tiberio Economou, Mélissa Simard, Isabelle Lorthois, Maxim Maheux, Bryan Roy, Louis-Charles Masson, Alexandre Morin, and Roxane Pouliot, Natavudh Townamchai and Somchai Eiam-Ong (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.09 ISBN: 9781634855679

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  • Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

    Hitoshi Habuka (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    InTech  2016.09 ISBN: 9789535125730

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  • Advances in Materials Science Research

    Giuseppe Acciani, Hitoshi Habuka, Yuji Aoki, Masataka SugimotoYunxiang Tong, Yufeng Zheng, Li Li, Dmitry V. Gunderov, Min-Chie Chiu, Long-Jyi Yeh, Yao-Jen Lai, Mariyam Adnan, J. Jeyakodi Moses (Part: Joint Work , Range: 担当の章を単独で執筆した。 )

    Nova Science Publishers  2016.08 ISBN: 9781634831819

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Papers 【 display / non-display

  • Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

    Hitoshi Habuka,Mitsuko Muroi,Miya Matsuo,Yuuki Ishida,Shiro Hara,Shin-Ichi Ikeda

    Materials Science in Semiconductor Processing   88   192 - 197   2018.12  [Refereed]

    Joint Work


  • Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

    Yuuki Ishida,Shin-Ichi Ikeda,Shiro Hara,Hitoshi Habuka,Kenta Irikura,Mitsuko Muroi,Ayami Yamada,Miya Matsuo

    Materials Science in Semiconductor Processing   87   13 - 18   2018.11  [Refereed]

    Joint Work


  • Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases

    Ayami Yamada, Mitsuko Muroi, Toru Watanabe, Ayumi Saito, Ayumi Sakurai and Hitoshi Habuka

    Semiconductor Science and Technology   33 ( 9 )   2018.07  [Refereed]

    Joint Work


  • Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

    Miya Matsuo,Kento Miyazaki,Hitoshi Habuka,Akihiro Goto

    ECS Journal of Solid State Science and Technology   7 ( 9 )   N123 - N127   2018  [Refereed]

    Joint Work


  • Parallel langmuir processes for silicon epitaxial growth in a SiHCl3-SiHX-H2 system

    Toru Watanabe, Ayami Yamada, Ayumi Saito, Ayumi Sakurai, Hitoshi Habuka

    Materials Science in Semiconductor Processing   72   134 - 138   2017.12  [Refereed]

    Joint Work


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Review Papers 【 display / non-display

  • 化学工学辞典

    化学工学会(2006)     2006

    Introduction and explanation (others)   Joint Work

Works 【 display / non-display

  • Patent on measurement method for organic species concentration



  • Patent surface cleaning Process of silicon



  • Patent on Surface condition for crystal growth



  • Patent on process for obtaining uniform thickness of crystal film



  • Patent on producing light emitting cliodes



Grant-in-Aid for Scientific Research 【 display / non-display

  • Grant-in-Aid for Scientific Research(C)

    Project Year: 2006.04  -  2008.03 

Presentations 【 display / non-display

  • Increase in Silicon Film Deposition Rate in a SiHCl3-SiHx-H2 System

    A. Saito, A. Yamada, A. Sakurai and H. Habuka

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • Transport Phenomena in a Slim Vertical CVD Reactor for Minimal Manufacturing

    A. Yamada, N. Li, M. Matsuo, H. Habuka, Y. Ishida, S. Ikeda and S. Hara

    18th International Conference on Crystal Growth and Epitaxy  (Nagoya, Japan)  2016.08  

  • In Situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor

    Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas

    Asumi Hirooka, Hitoshi Habuka, Tomohisa Kato

    International Conference on Silicon Carbide and Related Materials 2015  (Naxos, Italy)  2015.10  

  • Numerical evaluation of silicon epitaxial growth for 450mm Ø substrate

    M. Matsui and H. Habuka

    EuroCVD20  (Sempach, Switzerland)  2015.07  

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Preferred joint research theme 【 display / non-display

  • Study on Reactors for Crystal Growth for producing electronics materials

Past of Collaboration and Commissioned Research 【 display / non-display

  • Etching technology for etching various materials

    Cooperative Research within Japan  

    Project Year: 2004.11  -  2007.03 

  • Analysis of transport phenomena in a thin film formation reactor

    Cooperative Research within Japan  

    Project Year: 2004.04  -  2007.03 

  • Semiconductor epitaxial growth reactor technology

    Funded Research offered by Enterprises  

    Project Year: 2001.07  -  2001.12