HANEJI Nobuo

Affiliation

Faculty of Engineering, Division of Intelligent Systems Engineering

Job Title

Professor

Date of Birth

1957

Mail Address

E-mail address



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Education 【 display / non-display 】

  • 　
    -
    1985

    The University of Tokyo   Department of Electronic Engineering   Doctor Course   Completed

  • 　
    -
    1982

    The University of Tokyo   Department of Electronic Engineering   Master Course   Completed

  • 　
    -
    1980

    The University of Tokyo   Depaartment of Electronic Engineering   Graduated

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Degree 【 display / non-display 】

  • Doctor of Engineering - The University of Tokyo

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Campus Career 【 display / non-display 】

  • 2003.10
    　
    　

    Duty   Yokohama National UniversityFaculty of Engineering   Division of Intelligent Systems Engineering   Professor  

  • 2001.4
    -
    2003.9

    Duty   Yokohama National UniversityFaculty of Engineering   Division of Intelligent Systems Engineering   Associate Professor  

  • 1999.4
    -
    2001.3

    Duty   Yokohama National UniversityGraduate School of Engineering   Associate Professor  

  • 1989.6
    -
    1999.3

    Duty   Yokohama National UniversitySchool of Engineering   Associate Professor  

  • 1985.4
    -
    1989.5

    Duty   Yokohama National UniversitySchool of Engineering   Lecturer  

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External Career 【 display / non-display 】

  • 1997.6
    -
    1999.3

    University of Tokyo   VLSI Design and Education Center   Associate Professor (as old post name)  

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Research Areas 【 display / non-display 】

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

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Research Career 【 display / non-display 】

  • Silicon gatestuck

    Project Year：

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Books 【 display / non-display 】

  • アナログ集積回路設計技術

    浅田邦博，永田 穰　監修（ Role： Joint author）

    培風館 

    　More details

    Language：Japanese Book type：Other

    8．帰還　を担当

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Thesis for a degree 【 display / non-display 】

  • SiO2中のトラップによる電子捕獲に関する研究

    羽路　伸夫

    1985.3

    Doctoral Thesis   Single Work  

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    東京大学
    MOSFETのゲート絶縁膜に用いられるシリコン酸化膜中の電子トラップについて，アバランシェ注入による測定システムの構築と，トラップ密度と捕獲断面積の新しい解析手法を提案し，その有効性を明らかにした．また，プラズマ陽極酸化に塩素を添加することが，膜質の改善に有効であることも明らかにした．

  • 電子ビームアニールに関する研究

    羽路　伸夫

    1982.3

    Master Thesis   Single Work  

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    東京大学
    Siへのイオン打ち込み後のダメージの回復について，不純物の再分布が小さい低電圧大電流の走査型電子ビームアニールを行い，特性を評価した．また，本方法を用いて自己整合型MOSFETを試作した．

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Papers 【 display / non-display 】

  • Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition

    Hiroki Watanabe, Takumi Tokimitsu, Jyunko Shiga, Nobuo Haneji and Yukihiro Shimogaki

    Jap. J. Appl. Phys   45 ( 6 )   L151 - L153   2006.2  [Reviewed]

    Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    Taro Arakawa, Yoshiki Awa, Tomoyoshi Ide, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama, Hiromasa Shi … Show more authors

    Jap. J. Appl. Phys   44 ( 7B )   5819 - 5823   2005.6  [Reviewed]

    Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

    Wenwu Wang, Toshihide Nabatame, Nobuo Haneji and Yukihiro Shimogaki

    Jap. J. Appl. Phys   44 ( 32 )   L1019 - 1021   2005.6  [Reviewed]

    Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • 液相堆積シリコン酸化膜／シリコン界面特性の改善

    羽路伸夫,ポーンケオ・チャンタマリー,毛利重信

    電気学会論文誌C   123 ( 10 )   1695 - 1699   2003.10  [Reviewed]

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    Language：Japanese   Publishing type：Research paper (scientific journal)   Joint Work  

  • Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    N. Haneji, G. Segami, T. Ide, T. Suzuki, T. Arakawa, K. Tada, Y. Shimogaki and Y. Nakano

    Jpn. J. Appl. Phys.   42 ( 6B )   3958 - 3961   2003.6  [Reviewed]

    Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

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Review Papers 【 display / non-display 】

  • シリコン酸化膜を水中で作る－室温での液相堆積法

    BREAK THROUG   161   7 - 10   1999

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    Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (other)   Single Work  

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Past of Collaboration and Commissioned Research 【 display / non-display 】

  • Embedded Capacitance in WLP

    Cooperative Research within Japan  

    Project Year： 2005.10  -  2007.3 

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Charge of on-campus class subject 【 display / non-display 】

  • 2021   システムデバイス実習

    Graduate school of Engineering Science

  • 2021   エレクトロニクス実装実習F

    Graduate school of Engineering Science

  • 2021   エレクトロニクス実装実習S

    Graduate school of Engineering Science

  • 2021   集積エレクトロニクスF

    Graduate school of Engineering Science

  • 2021   集積エレクトロニクスS

    Graduate school of Engineering Science

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