HANEJI Nobuo

Organization

Faculty of Engineering, Division of Intelligent Systems Engineering

Title

Professor

Date of Birth

1957

Mail Address

E-mail address



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Graduating School 【 display / non-display 】

  • 　
    -
    1980

    The University of Tokyo   Faculty of Engineering   Depaartment of Electronic Engineering   Graduated

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Graduate School 【 display / non-display 】

  • 　
    -
    1985

    The University of Tokyo  Graduate School, Division of Engineering  Department of Electronic Engineering  Doctor Course  Completed

  • 　
    -
    1982

    The University of Tokyo  Graduate School, Division of Engineering  Department of Electronic Engineering  Master Course  Completed

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Degree 【 display / non-display 】

  • Ph D. of Engineering -  The University of Tokyo

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External Career 【 display / non-display 】

  • 1997.06
    -
    1999.03

    University of Tokyo   VLSI Design and Education Center   Associate Professor (as old post name)  

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Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display 】

  • Electronic materials/Electric materials

  • Electron device/Electronic equipment

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Research Career 【 display / non-display 】

  • Silicon gatestuck

    Project Year：  -   

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Papers 【 display / non-display 】

  • Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition

    Hiroki Watanabe, Takumi Tokimitsu, Jyunko Shiga, Nobuo Haneji and Yukihiro Shimogaki

    Jap. J. Appl. Phys   45 ( 6 )   L151 - L153   2006.02  [Refereed]

    Joint Work

    Web of Science

  • Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    Taro Arakawa, Yoshiki Awa, Tomoyoshi Ide, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama, Hiromasa Shimizu, Yukihiro Shimogaki and Yoshiaki Nakano

    Jap. J. Appl. Phys   44 ( 7B )   5819 - 5823   2005.06  [Refereed]

    Joint Work

    Web of Science

  • Electrical and Thermal Stability Characteristics of HfCN Films as Metal Gate-Electrode Synthesized by Metalorganic Chemical Vapor Deposition

    Wenwu Wang, Toshihide Nabatame, Nobuo Haneji and Yukihiro Shimogaki

    Jap. J. Appl. Phys   44 ( 32 )   L1019 - 1021   2005.06  [Refereed]

    Joint Work

    Web of Science

  • Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

    N. Haneji, G. Segami, T. Ide, T. Suzuki, T. Arakawa, K. Tada, Y. Shimogaki and Y. Nakano

    Jpn. J. Appl. Phys.   42 ( 6B )   3958 - 3961   2003.06  [Refereed]

    Joint Work

    Web of Science

  • Kinetic Study on PECVD To Deposit Low-k a-C:F Films Using Appearance Mass Spectrometry

    T. Tokimitsu, T. Okamoto, T. Kano, N.Haneji, K. Tada, and Y. Shimogaki

    2003 MRS Spring meeting     2003.04  [Refereed]

    Joint Work

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Past of Collaboration and Commissioned Research 【 display / non-display 】

  • Embedded Capacitance in WLP

    Cooperative Research within Japan  

    Project Year： 2005.10  -  2007.03 

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