Papers - INOUE Fumihiro
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Disaggregation and Re-Integration: Emerging Trends in Semiconductor Integration with Chiplets
Inoue Fumihiro
Journal of The Japan Institute of Electronics Packaging 28 ( 6 ) 511 - 515 2025.9
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Single Work
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井上 史大
SCAS news / 技術・経営戦略室 編 2025 ( 2 ) 5 - 9 2025.8
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：大阪 : 住化分析センター Single Work
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横浜国立大学・井上先生の取り組み
井上 史大, 今井 正芳
精密工学会誌 91 ( 7 ) 731 - 734 2025.7
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：公益社団法人 精密工学会 Joint Work
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Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration
Kitagawa Hayato, Sato Ryosuke, Ebiko Sodai, Nagata Atsushi, Ahn Chiwoo, Kim Yeounsoo, Kang Jiho, Ue … Show more authors
Kitagawa Hayato, Sato Ryosuke, Ebiko Sodai, Nagata Atsushi, Ahn Chiwoo, Kim Yeounsoo, Kang Jiho, Uedono Akira, Inoue Fumihiro Hide authors
ACS Omega 10 ( 25 ) 27575 - 27584 2025.6
Language：English Publishing type：Research paper (scientific journal) Publisher：American Chemical Society Joint Work
Wafer bonding is a step in processing of state-of-theartintegration architectures in CMOS devices. Sufficiently high bonding strength and low distortion with high alignment accuracy are essential to realize these device structures. A challenge in realizing advanced architectures is reducing the thermal history associated with the bonding process. Although much research has been conducted on wafer bonding methods compatible with the latest semiconductor manufacturing processes, discussions on the interface mechanisms during low temperature annealing have been insufficient. In this study, plasma-activated bonding was carried out using SiCN, which is a major bonding dielectric material. The bonding strength and water remaining at the interface were subsequently evaluated. We found that a SiCN film achieved greater bonding strength after post bond annealing at a low temperature of 250 °C and completely consumed the interfacial water. Analyses of the surface and interface revealed the carbon bonding leads to great bonding interface by low-temperature annealing.
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Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration
Kitagawa, H; Sato, R; Ebiko, S; Nagata, A; Ahn, C; Kim, Y; Kang, J; Uedono, A; Inoue, F
ACS OMEGA 10 ( 25 ) 27575 - 27584 2025.6
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Direct Physical Vapor Deposition of Liquid Metal on Treated Metal Surface
Matsuda, R; Isano, Y; Onishi, K; Ota, H; Inoue, F
ACS APPLIED ELECTRONIC MATERIALS 7 ( 9 ) 3656 - 3666 2025.4 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Direct Physical Vapor Deposition of Liquid Metal on Treated Metal Surface
Matsuda Ryosuke, Isano Yuji, Onishi Koki, Ota Hiroki, Inoue Fumihiro
ACS Applied Electronic Materials 7 A - K 2025.4
Language：English Publishing type：Research paper (scientific journal) Publisher：American Chemical Society Joint Work
Liquid metal has garnered significant interest as a potential stretchable wiring material for next-generation stretchable electronics. The operation of substrates within these electronics necessitates adherence to three primary criteria for the wiring of electronic substrates to facilitate the integration of stretchable circuits in society. First, the wiring’s top surface must remain exposed to allow for the straightforward attachment of electronic components following the wiring fabrication. Second, the design of the wiring pattern should not be subject to significant constraints. Third, the substrate’s top surface needs to be clean and devoid of excess conductive material to mitigate the risk of unintended short-circuits. Previous studies have not introduced a liquid metal patterning method that meets all of these criteria. Physical vapor deposition (PVD) is commonly employed for depositing hard metals on nonstretchable substrates such as silicon and glass. However, when subjected to direct PVD, liquid metal forms independent nanoparticles, losing conductivity due to its exceptionally high surface tension and the presence of surface oxide films. Consequently, the direct deposition of liquid metals without subsequent physical stimulation, such as the application of pressure, has been deemed challenging. In our study, we enhanced the substrate surface’s wettability by treating it with copper chloride, thereby facilitating the direct deposition of liquid metals onto the substrate surface. The oxide film on the liquid metal’s surface is disrupted upon contact with the copper chloride-treated substrate, enabling the nanoparticles to coalesce and establish electrical connectivity, thereby preserving conductivity even when stretched. The resultant stretchable wiring exhibited a fine line width of approximately 50 μm and a thin film thickness of approximately 1 μm, ensuring a robust bond with the substrate surface. Consequently, this wiring technique supports diverse patterning designs when combined with processing methods such as photolithography.
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Factors determining bond wave speed in wafer bonding
Ryosuke Sato, Atsushi Nagata, Hayato Kitagawa, Ryota Ogata, Anton Myalitsin and Fumihiro Inoue
Japanese Journal of Applied Physics 64 ( 3 ) 2025.3 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Factors determining bond wave speed in wafer bonding
Sato, R; Nagata, A; Kitagawa, H; Ogata, R; Myalitsin, A; Inoue, F
JAPANESE JOURNAL OF APPLIED PHYSICS 64 ( 3 ) 2025.3
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Wet-chemical Cu Cleaning for Fine-Pitch Hybrid Bonding
Nakayama, K; Hayama, K; Tanaka, F; Dewilde, S; Deckers, S; Heylen, N; Tanaka, Y; Okazaki, Y; Gan, N … Show more authors
Nakayama, K; Hayama, K; Tanaka, F; Dewilde, S; Deckers, S; Heylen, N; Tanaka, Y; Okazaki, Y; Gan, N; Iino, H; Inoue, F; Philipsen, H Hide authors
2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 1859 - 1863 2025
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Novel Bonding Interfacial Material for Carrier Wafer of BSPDN & Reconstructed D2W Integration
Kitagawa, H; Yamamoto, T; Lee, J; Machida, S; Yuasa, K; Inoue, F
2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC 2025
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Characterization of Oxidation-Controlled Cu for 3D-Chiplet Integration
Hayama, K; Kamiya, Y; Nakayama, K; Tanaka, FL; Aizawa, R; Fukumoto, Y; Inoue, F
2025 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC 2025
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Bond Wave Analysis of SiCN for Fine Pitch Hybrid Bonding
Sato, R; Nagata, A; Kitagawa, H; Kondo, Y; Saito, K; Park, J; Ahn, C; Kim, YS; Kang, J; Inoue, F
2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2046 - 2053 2025
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Assessing Queue Time in D2W Hybrid Bonding Through Precise Bond Strength Measurements
Yuki, Y; Fuse, J; Aoki, S; Hare, T; Mihara, K; Miyoshi, T; Yamamoto, N; Teranishi, S; Fukushima, T; … Show more authors
Yuki, Y; Fuse, J; Aoki, S; Hare, T; Mihara, K; Miyoshi, T; Yamamoto, N; Teranishi, S; Fukushima, T; Uedono, A; Inoue, F Hide authors
2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 878 - 884 2025
Language：English Publishing type：Research paper (scientific journal) Joint Work
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インタビュー 井上史大横浜国大准教授 京浜地区に半導体企業集う研究開発拠点「日本版アイメック」を : 「後工程」技術底上げ、人材育成も
井上 史大, 藤田 綾
金融財政business : 時事トップ・コンフィデンシャル+ ( 11264 ) 10 - 12 2024.10
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：東京 : 時事通信社 Joint Work
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Water stress corrosion at wafer bonding interface during bond strength evaluation
Tomoya Iwata, Junya Fuse, Yuki Yoshihara, Yusuke Kondo, Marie Sano, Fumihiro Inoue
Materials Science in Semiconductor Processing 184 2024.8 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Single Work
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Kohei Nakayama, Kenta Hayama, Fabiana Lie Tanaka, Mai Thi Ngoc La and Fumihiro Inoue
ECS Journal of Solid State Science and Technology 13 ( 7 ) 2024.7 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Single Work
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Akira Uedono, Ryu Hasunuma, Koki Onishi, Hayato Kitagawa, Fumihiro Inoue, Koji Michishio, Nagayasu … Show more authors
Akira Uedono, Ryu Hasunuma, Koki Onishi, Hayato Kitagawa, Fumihiro Inoue, Koji Michishio, Nagayasu Oshima Hide authors
Journal of Applied Physics 136 ( 4 ) 2024.7 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Single Work
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Temporary Direct Bonding by Low Temperature Deposited SiO<sub>2</sub> for Chiplet Applications
Onishi, K; Kitagawa, H; Teranishi, S; Uedono, A; Inoue, F
ACS APPLIED ELECTRONIC MATERIALS 6 ( 4 ) 2449 - 2456 2024.4
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications
Onishi Koki, Kitagawa Hayato, Teranishi Shunsuke, Uedono Akira, Inoue Fumihiro
ACS Applied Electronic Materials 6 ( 4 ) 2449 - 2456 2024.4
Language：English Publishing type：Research paper (scientific journal) Publisher：American Chemical Society (ACS) Joint Work
Die-to-wafer hybrid bonding is a crucial technology in advanced chiplet integration systems. Temporary die bonding on wafers and subsequent debonding are key aspects of this process. However, conventional polymer-based temporary bonding techniques involve several challenges such as issues related to the accurate placement of the die. Although direct bonding is a promising technology, such processes normally involve permanent bonds. The present study demonstrates an innovative temporary bonding method based on plasma-activated direct bonding and examines the associated bonding/debonding mechanisms. In this work, a dielectric bonding film was deposited at a relatively low temperature by chemical vapor deposition. This method offers several advantages, including high alignment accuracy, limited risk of die shift, and cost reduction based on removal of the carrier wafer grinding process. Wafer bonding was performed with SiO2 films deposited at low temperatures, and voids were formed at the bonding interfaces during postbond annealing. The bonding energy was sufficiently low even after annealing to allow wafer pairs to be released as a consequence of voids serving as initiation points for debonding. Desorption gas analysis established that the SiO2 films absorbed significant moisture from ambient air, which was the root cause of void formation. Die-to-wafer bonding tests confirmed the formation of voids at the bonding interfaces. This dielectric is likely to have applications as a temporary bonding material in chiplet integration systems.
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Inoue Fumihiro
Journal of The Japan Institute of Electronics Packaging 27 ( 2 ) 207 - 207 2024.3
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Single Work
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D2W Hybrid Bonding System Achieving High-Accuracy and High-Throughput With Minimal Configurations
Mihara, K; Hare, T; Sakai, H; Aoki, S; Terada, T; Murugesan, M; Hashimoto, H; Kino, H; Tanaka, T; F … Show more authors
Mihara, K; Hare, T; Sakai, H; Aoki, S; Terada, T; Murugesan, M; Hashimoto, H; Kino, H; Tanaka, T; Fukushima, T; Inoue, F; Uedono, A Hide authors
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 420 - 426 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Use of digital image correlation method to evaluate the properties of mold compound targeted for fan out wafer level packaging applications
Proceedings of JIEP Annual Meeting 38 ( 0 ) 15B1-1 2024
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Joint Work
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Surface Characterization and Modification for Cu/SiCN Hybrid Bonding
Hayama, K; Nakayama, K; Sato, R; Kamiya, Y; Harada, K; Yokoyama, M; Kawase, Y; Inoue, F
2024 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC 2024 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation
Inoue, F; Nagata, A; Fuse, J; Ebiko, S; Sato, R; Saito, K; Kondo, Y; Kawauchi, T; Park, J; Ahn, C; … Show more authors
Inoue, F; Nagata, A; Fuse, J; Ebiko, S; Sato, R; Saito, K; Kondo, Y; Kawauchi, T; Park, J; Ahn, C; Kim, M; Kang, J Hide authors
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 69 - 75 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Exploring Bonding Mechanism of SiCN for Hybrid Bonding
Ebiko, S; Iacovo, S; Chew, SA; Zhang, BY; Uedono, A; Inoue, F
PROCEEDINGS OF THE IEEE 74TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 2024 1953 - 1957 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Impact of Cu Pad Density on Cu-CMP and Bonding Yield for Chip-to-Wafer Hybrid Bonding
Mariappan, M; Hashimoto, H; Mihara, K; Hare, T; Fukushima, T; Inoue, F; Uedono, A
2024 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE, 3DIC 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Electrochemical Deposition of Indium for Scalable 3D Quantum Chiplets
Goundar, JA; Mai, LTN; Yuki, M; Yugi, O; Kosaka, H; Inoue, F
2024 INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE, 3DIC 2024
Language：English Publishing type：Research paper (scientific journal) Joint Work
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佐野 麻理恵, 岩田 知也, 布施 淳也, 吉原 佑樹, 根本 俊介, 井上 史大
マイクロエレクトロニクスシンポジウム論文集 33 389 - 391 2023.9
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：東京 : エレクトロニクス実装学会 Joint Work
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近藤 悠介, 中村 雄三, 岩田 知也, 布施 淳也, 井上 史大
マイクロエレクトロニクスシンポジウム論文集 33 226 - 228 2023.9
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：東京 : エレクトロニクス実装学会 Joint Work
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Surface Topography Control on Cu Pad for Hybrid Bonding
Nakayama Kohei, Iwata Tomoya, Ebiko Sodai, La Thi Ngoc Mai, Harada Ken, Yokoyama Masahiro, Kawase Y … Show more authors
Nakayama Kohei, Iwata Tomoya, Ebiko Sodai, La Thi Ngoc Mai, Harada Ken, Yokoyama Masahiro, Kawase Yasuhiro, Inoue Fumihiro Hide authors
2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM) 2023.6
Language：English Publishing type：Research paper (scientific journal) Publisher：Institute of Electrical and Electronics Engineers Joint Work
Conference Location: Dresden, Germany 22-25 May 2023
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ウエハ接合前後プロセスが接合強度測定に及ぼす影響
岩田 知也, 布施 淳也, 蛯子 颯大, 永野 風矢, 井上 史大
エレクトロニクス実装学術講演大会講演論文集 37 ( 0 ) 15A2-4 2023.3
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：一般社団法人エレクトロニクス実装学会 Joint Work
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ウエハ接合強度測定におけるばらつき最小化の検討
布施 淳也, 岩田 知也, 蛯子 颯大, 井上 史大
エレクトロニクス実装学術講演大会講演論文集 37 ( 0 ) 15A2-3 2023.3
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：一般社団法人エレクトロニクス実装学会 Joint Work
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Nagano F., Inoue F., Phommahaxay A., Peng L., Chancerel F., Naser H., Beyer G., Uedono A., Beyne E. … Show more authors
Nagano F., Inoue F., Phommahaxay A., Peng L., Chancerel F., Naser H., Beyer G., Uedono A., Beyne E., De Gendt S., Iacovo S. Hide authors
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 12 ( 3 ) 2023.3 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Wafer Thinning for 3D Integration
Inoue Fumihiro
Journal of The Japan Institute of Electronics Packaging 26 ( 1 ) 172 - 177 2023.1
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Single Work
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井上 史大
エレクトロニクス実装学会誌 = Journal of the Japan Institute of Electronics Packaging 26 ( 1 ) 172 - 177 2023.1
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：エレクトロニクス実装学会 Single Work
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Surface Topography Control on Cu Pad for Hybrid Bonding
Nakayama, K; Iwata, T; Ebiko, S; Mai, LTN; Harada, K; Yokoyama, M; Kawase, Y; Inoue, F
2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM 2023
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Inorganic Temporary Direct Bonding for Collective Die to Wafer Hybrid Bonding
Inoue, F; Teranishi, S; Iwata, T; Onishi, K; Yamamoto, N; Kawai, A; Aoki, S; Hare, T; Uedono, A
2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC 556 - 563 2023
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Exploring Bond Strength for Advanced Chiplet with Hybrid Bonding
Fuse, J; Iwata, T; Yoshihara, Y; Sano, M; Inoue, F
PROCEEDINGS OF THE 25TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, EPTC 2023 199 - 203 2023
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Bonding Strength Measurement for Polymer/Cu Hybrid Bonding
Proceedings of Microelectronics Symposium 33 ( 0 ) 226 - 228 2023
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Joint Work
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Impact of Long-term Stress and Measurement Environment on Bonding Strength
Proceedings of Microelectronics Symposium 33 ( 0 ) 389 - 391 2023
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Joint Work
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Panel Discussion
Kanayama Toshihiko, ICHIMURA Koji, SHIBUKAWA Jun, SEGAWA Sumie, ISHIDA Masahiko, WAKABAYASHI Hitosh … Show more authors
Kanayama Toshihiko, ICHIMURA Koji, SHIBUKAWA Jun, SEGAWA Sumie, ISHIDA Masahiko, WAKABAYASHI Hitoshi, HORI Masaru, INOUE Fumihiro Hide authors
JSAP Annual Meetings Extended Abstracts 2022.2 ( 0 ) 199 - 199 2022.8
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics Joint Work
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Innovation of 3D Integration and Packaging for Green Transformation
Inoue Fumihiro
JSAP Annual Meetings Extended Abstracts 2022.2 ( 0 ) 197 - 197 2022.8
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics Single Work
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Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding
Nagano F., Iacovo S., Phommahaxay A., Inoue F., Chancerel F., Naser H., Beyer G., Beyne E., De Gend … Show more authors
Nagano F., Iacovo S., Phommahaxay A., Inoue F., Chancerel F., Naser H., Beyer G., Beyne E., De Gendt S. Hide authors
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 11 ( 6 ) 2022.6 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Electrochemical deposition of indium from chloride bath for low-temperature microbump bonding
Park Kimoon, Inoue Fumihiro, Derakhshandeh Jaber, Yoo Bongyoung
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( 4 ) 041003-1 - 041003-9 2022.4 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Inoue Fumihiro, Phommahaxay Alain, Gokita Yohei, Moeller Berthold, Beyne Eric
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY 119 ( 5-6 ) 3427 - 3435 2022.3 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Low-Temperature Chemical Vapor Deposition of SiCN for Hybrid Bonding
Onishi Koki, Iwata Tomoya, Habuka Hitoshi, Nagano Fuya, Inoue Fumihiro
2022 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2022) 59 - 60 2022
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Proceedings of Microelectronics Symposium 32 ( 0 ) 153 - 156 2022
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Joint Work
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Corrosion analysis in chemical mechanical polishing for hybrid bonding
Proceedings of Microelectronics Symposium 32 ( 0 ) 149 - 152 2022
Language：Japanese Publishing type：Research paper (scientific journal) Publisher：The Japan Institute of Electronics Packaging Joint Work
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Area-Selective Electroless Deposition of Cu for Hybrid Bonding
Inoue Fumihiro, Iacovo Serena, El-Mekki Zaid, Kim Soon-Wook, Struyf Herbert, Beyne Eric
IEEE ELECTRON DEVICE LETTERS 42 ( 12 ) 1826 - 1829 2021.12 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Area-Selective Electroless Deposition of Cu for Hybrid Bonding
Inoue Fumihiro, Iacovo Serena, El-Mekki Zaid, Kim Soon-Wook, Struyf Herbert, Beyne Eric
IEEE Electron Device Letters 42 ( 12 ) 1826 - 1829 2021.11
Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE Joint Work
This letter describes the use of area-selective electroless Cu deposition for topography control of Cu-SiCN hybrid bonding pads. The electroless deposition of Cu allows one to obtain protrusions on hybrid bonding Cu pads without further polishing optimization. A recessed Cu pad after chemical mechanical polishing becomes a protrusion after electroless deposition. This indicates that the electroless Cu film was selectively deposited on Cu, without deposition on the SiCN surface. A void-free Cu-Cu bonding interface was observed after annealing at 350 °C with an electroless Cu layer at the interface. 100% electrical connection was obtained at 1.4- μm pitch where the deposition thickness was on target.
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Iacovo Serena, Peng Lan, Nagano Fuya, Uhrmann Thomas, Burggraf Jurgen, Fehkuhrer Andreas, Conard Th … Show more authors
Iacovo Serena, Peng Lan, Nagano Fuya, Uhrmann Thomas, Burggraf Jurgen, Fehkuhrer Andreas, Conard Thierry, Inoue Fumihiro, Kim Soon-Wook, De Vos Joeri, Phommahaxay Alain, Beyne Eric Hide authors
IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021) 2097 - 2104 2021.6 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Derakhshandeh Jaber, Gerets Carine, Inoue Fumihiro, Capuz Giovanni, Cherman Vladimir, Lofrano Melin … Show more authors
Derakhshandeh Jaber, Gerets Carine, Inoue Fumihiro, Capuz Giovanni, Cherman Vladimir, Lofrano Melina, Hou Lin, Cochet Tom, De Preter Inge, Webers Tomas, Bex Pieter, Jamieson Geraldine, Maehara Masataka, Shafahian Ehsan, Bertheau Julien, Beyne Eric, La Tulipe Douglas Charles, Beyer Gerald, Van der Plas Geert, Miller Andy Hide authors
IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021) 1119 - 1124 2021.6 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Inoue Fumihiro, Derakhshandeh Jaber, Gerets Carine, Beyne Eric
2021 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2021) 9 - 10 2021.5
Language：Japanese Publishing type：Research paper (scientific journal) Joint Work
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Inoue Fumihiro, Derakhshandeh Jaber, Lofrano Melina, Beyne Eric
JAPANESE JOURNAL OF APPLIED PHYSICS 60 ( 2 ) 026502-1 - 026502-6 2021.2 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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The unique properties of SiCN as bonding material for hybrid bonding
Iacovo Serena, Kim Soon-Wook, Nagano Fuya, Peng Lan, Inoue Fumihiro, Phommahaxay Alain, Beync Eric
2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 38 - 38 2021
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Electrodeposition of Indium for Low Temperature 3D Stacking
Inoue Fumihiro, Park Kimoon, Derakhshandeh Jaber, Yoo Bongyoung
2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 31 - 31 2021
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
F. Nagano, S. Iacovo, A. Phommahaxay, F. Inoue, E. Sleeckx, G. Beyer, E. Beyne, S. De. Gendt
ECS Journal of Solid State Science and Technology 9 ( 12 ) 123011-1 - 123011-7 2020.12 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Fumihiro Inoue, Arnita Podpod, Lan Peng, Alain Phommahaxay, Kenneth June Rebibis, Akira Uedono, Eri … Show more authors
Fumihiro Inoue, Arnita Podpod, Lan Peng, Alain Phommahaxay, Kenneth June Rebibis, Akira Uedono, Eric Beyne Hide authors
Journal of Manufacturing Processes 58 811 - 818 2020.10 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier Joint Work
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Derakhshandeh, J. and Capuz, G. and Cherman, V. and Inoue, F. and De Preter, I. and Hou, L. and Bex … Show more authors
Derakhshandeh, J. and Capuz, G. and Cherman, V. and Inoue, F. and De Preter, I. and Hou, L. and Bex, P. and Gerets, C. and Duval, F. and Webers, T. and Bertheau, J. and Van Huylenbroeck, S. and Phommahaxay, A. and Shafahian, E. and Van Der Plas, G. and Beyne, E. and Miller, A. and Beyer, G. Hide authors
Proceedings - Electronic Components and Technology Conference 2020-June 617 - 622 2020.8 [Reviewed]
Language：English Publishing type：Research paper (scientific journal) Joint Work
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Characterization of silicon carbon nitride for low temperature wafer-to-wafer direct bonding
Nagano, F. and Iacovo, S. and Phommahaxay, A. and Inoue, F. and Sleeckx, E. and Beyer, G. and De. G … Show more authors
Nagano, F. and Iacovo, S. and Phommahaxay, A. and Inoue, F. and Sleeckx, E. and Beyer, G. and De. Gendt, S. and Beyne, E. Hide authors
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Language：English Publishing type：Research paper (scientific journal) Joint Work
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Language：English Publishing type：Research paper (scientific journal) Joint Work
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Language：English Publishing type：Research paper (scientific journal) Joint Work
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Language：English Publishing type：Research paper (scientific journal) Joint Work
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Language：English Publishing type：Research paper (scientific journal) Joint Work