研究者詳細 - 伊藤　暁彦

論文 - 伊藤　暁彦

件数 155 件

High-light-yield and fast-response β-Ga2O3–Al2O3 thick-film scintillators epitaxially grown via chemical vapor deposition

N. Yamaguchi, A. Ito

Materials Letters 369 136721 2024年8月 [査読有り]

DOI

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

HfTiO4 transparent thick film phosphors activated with Eu3+, Dy3+, and Tb3+ ions

Y. Hashimoto, A. Ito

Materials Letters 366 136558 2024年7月 [査読有り]

DOI

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

Luminescence and scintillation properties of Ce3+-doped Gd3Al5O12 thick-film phosphors epitaxially grown using chemical vapor deposition

Y. Deguchi, A. Ito

Optical Materials 153 115565 2024年7月 [査読有り]

DOI

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

Scintillation properties of transparent Lu-α-SiAlON:Ce3+ ceramics

K. Aminaka, J. Tatami, M. Iijima, A. Ito, S. Matsumoto, T. Takahashi, T. Ohji

International Journal of Applied Ceramic Technology 21 ( 4 ) 2671 - 2677 2024年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

その他リンク： https://ceramics.onlinelibrary.wiley.com/doi/10.1111/ijac.14758

CARD9-mediated macrophage responses and collagen fiber capsule formation caused by textured-type breast implants

M. Shoji, E. Kanno, H. Tanno, K. Yamaguchi, S. Ishi, N. Takagi, S. Kurosaka, K. Sato, M. Niiyama, A … 全著者表示

Plastic and Reconstructive Surgery accepted 2023年10月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）単著

Chemical vapor deposition of ordered structures in YAG–alumina eutectic system

Y. Mitsuhashi, S. Matsumoto, A. Ito

Journal of the American Ceramic Society 106 ( 9 ) 5140 - 5146 2023年9月 [査読有り]

DOI

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

その他リンク： https://doi.org/10.1111/jace.19176

Growth and scintillation properties of Ce3+:LuAG–Al2O3 chemically deposited eutectics

S. Matsumoto, S. Kurosawa, D. Yokoe, T. Kimura, A. Ito

Optical Materials 138 113674 2023年4月 [査読有り]

DOI

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）共著

Directionally solidified eutectics (DSEs) in Al2O3-based systems have been studied as high-temperature structural ceramics, also recently attracting attention as a phosphor screen for high-resolution radiation imaging. However, it is difficult to obtain uniform and thinly processed DSE in large areas. Here, we report a chemically deposited eutectic (CDE) of Lu3Al5O12 (LuAG)–Al2O3 using a laser-assisted chemical vapor deposition method. The Ce3+-doped LuAG lamella were epitaxially grew with an α-Al2O3 matrix on an r-cut sapphire substrate. The Ce3+:LuAG–α-Al2O3 CDE film exhibited green emissions due to the 5d–4f transitions of the Ce3+ center under UV light and α-/X-ray irradiations. The α-ray dose in the Ce3+:LuAG phase was estimated with Monte Carlo simulations to study a scintillation light yield of the CDE film. The X-ray radiograph of the semiconductor storage device was successfully obtained using a 15-μm-thick Ce3+:LuAG–α-Al2O3 CDE film as an X-ray phosphor screen.

High-Speed Epitaxial Growth of Terbium- and Europium-Doped Yttrium Aluminum Perovskite Thick Film Phosphors Using Laser-Assisted Chemical Vapor Deposition

Y. Mitsuhashi, S. Matsumoto, A. Ito

Materials Transactions 64 ( 6 ) 1107 - 1111 2023年2月 [査読有り]

DOI Web of Science Scopus CiNii Research

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：公益社団法人日本金属学会共著

A thick film scintillator with a few tens of micrometers thickness is expected to improve sensitivity and spatial resolution in radiation detection and imaging, while its production method is limited to a costly process of thinning a melt-grown single crystal ingot. Here, we demonstrated the high-speed epitaxial growth of terbium- and europium-doped yttrium aluminum perovskite (Tb3+:YAP and Eu3+:YAP) transparent thick film phosphor using laser-assisted chemical vapor deposition (CVD). The (110)-oriented YAP thick film was epitaxially grown on a (100) SrTiO3 (STO) substrate. The deposition rate was 53 μm h−1, which was 50–90 times faster than those reported for conventional thermal CVD. Under UV and X-ray irradiation, the films emitted green and orange lights originating from 4f→4f transitions of Tb3+ and Eu3+ centers, respectively. The fluorescence decay curves of the films were fitted to 1.96 and 1.89 ms for Tb3+ and Eu3+ centers. The 9 μm-thick Eu3+:YAP thick film phosphor can be used as a scintillation screen of X-ray imaging test to see though a semiconductor storage device.

Chemically vapor deposited oxide-based thick film scintillators

A. Ito, S. Matsumoto

Japanese Journal of Applied Physics 62 010612 2022年12月 [査読有り] [招待有り]

DOI

担当区分：筆頭著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

その他リンク： https://doi.org/10.35848/1347-4065/aca249

High-throughput production of LuAG-based highly luminescent thick film scintillators for radiation detection and imaging

S. Matsumoto, A. Ito

Scientific Reports 12 ( 1 ) 19319 2022年11月 [査読有り]

DOI Web of Science PubMed

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）単著

その他リンク： https://doi.org/10.1038/s41598-022-23839-w

Photo- and Radioluminescence Properties of Eu3+-doped Y2O3 Thick Film Grown by Chemical Vapor Deposition

S. Matsumoto, T. Watanabe, A. Ito

Sensors and Materials 34 ( 2 ) 669 - 675 2022年1月 [査読有り]

DOI Web of Science

担当区分：最終著者,　責任著者記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：MYU K.K. 共著

Chemical vapor deposition of highly oriented ceramic coatings in a high-intensity laser irradiation

A. Ito

Journal of the Ceramic Society of Japan 129 ( 11 ) 646 - 653 2021年11月 [査読有り] [招待有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）単著

その他リンク： https://doi.org/10.2109/jcersj2.21135

Photo- and Radioluminescence Properties of Ce3+-doped Lu3Al5O12 Thick Film Grown by Chemical Vapor Deposition

S. Matsumoto, A. Minamino, A. Ito

Sensors and Materials 33 ( 6 ) 2209 - 2214 2021年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：MYU K.K. 共著

Preparation of HfO2–Al2O3 nanocomposite films using chemical vapor deposition

S. Matsumoto, A. Ito

Journal of the Ceramic Society of Japan 129 ( 1 ) 1 - 6 2021年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：公益社団法人日本セラミックス協会共著

We prepared HfO2–Al2O3 nanocomposite films using chemical vapor deposition. Fibrous and lamellar microstructures formed in the monoclinic and tetragonal HfO2 (m/t-HfO2)–α-Al2O3 films at deposition temperature of 1573 K and Al mole fraction in the precursor vapor of 36–74 mol %Al2O3. Characterization by electron microscopy revealed that the m/t-HfO2 fibrous and lamellar structures are present throughout the α-Al2O3 columnar matrix above 50 mol %Al2O3 (55 vol %Al2O3), while α-Al2O3 lamellar structure was formed in m-HfO2 matrix below 50 mol %Al2O3.

その他リンク： https://ci.nii.ac.jp/naid/130007965510

Precursor selection for metal–organic chemical vapor deposition of SrHfO3 films with Sr(dpm)2 and Sr(hfa)2

S. Fujie, A. Ito

Journal of the Ceramic Society of Japan 129 ( 1 ) 17 - 21 2021年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：公益社団法人日本セラミックス協会共著

SrHfO3 films were prepared using metal–organic chemical vapor deposition (MOCVD) with hafnium tetrakis(acetylacetonate) and two different Sr precursors, and the effects of Sr content in the vapor and deposition temperature on crystal phase and microstructure were investigated. With the strontium bis(dipivaloylmethanate) [Sr(dpm)2] precursor, low Sr content of the deposited films regardless of Sr supply ratio resulted in no detectable SrHfO3 formation. With the strontium bis(hexafluoroacetylacetonate) [Sr(hfa)2] precursor, along with linear increase of Sr content in the deposited films, the primary crystal phase of the film changed from monoclinic HfO2 to orthorhombic SrHfO3 to SrCO3. A single-phase orthorhombic SrHfO3 film was prepared with the Sr(hfa)2 precursor at 1373 K and 42 mol %Sr (corresponding to 50 mol %Sr in the film).

その他リンク： https://ci.nii.ac.jp/naid/130007965511

Fabrication of Lu2Ti2O7–Lu3NbO7 solid solution transparent ceramics by spark plasma sintering and their electrical conductivities

L.Q. An, L. Wang, L. Wang, R. Fan, A. Ito, T. Goto

Journal of the European Ceramic Society 40 ( 13 ) 4589-4594 2020年10月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed epitaxial growth of Y3Fe5O12 thick film with high magnetization on (420) Y3Al5O12 substrate using metal-organic chemical vapor deposition

H. Aida, R. Watanuki, A. Ito

Materials Letters 276 128228 2020年10月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed epitaxial growth of a (420)-oriented Y3Fe5O12 (YIG) thick film on (420) Y3Al5O12 substrate was demonstrated with a high deposition rate of 33 μm h−1 using metal-organic chemical vapor deposition. The epitaxial YIG thick film exhibited a high saturation magnetization of 202 emu cm−3, which was greater than the value reported for a single crystal. X-ray photoelectron spectroscopy implies that the high magnetization was associated with a reduced state of Fe ion in the garnet structure.

High-speed Epitaxial Growth of M-type Strontium Hexaferrite Films on Sapphire using Metal-Organic Chemical Vapor Deposition and Their Magnetic Property

K. Kato, R. Watanuki, A. Ito

Materials Letters 274 128046 2020年9月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed epitaxial growth of SrTiO3 transparent thick films composed of close-packed nanocolumns using laser chemical vapor deposition

J. Chen, A. Ito, T. Goto

Vacuum 177 109424 2020年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

(100) SrTiO3 transparent thick film was synthesized via high-speed epitaxial growth of close-packed nanocolumnar grains grown on (100) MgAl2O4 single-crystal substrate using laser chemical vapor deposition. The (100) epitaxial SrTiO3 film synthesized at a total chamber pressure of 0.4 kPa and a deposition temperature of 1113 K was optically transparent with a relative transmittance of 95% at a wavelength of 800 nm, and the deposition rate of the film was 20 μm h−1. TEM observation revealed that the SrTiO3 transparent thick film was composed of close-packed nanocolumnar grains.

Self-oriented growth of β-Yb2Si2O7 and X1/X2-Yb2SiO5 coatings using laser chemical vapor deposition

A. Ito, M. Sekiyama, T. Hara, T. Goto

Ceramics International 46 ( 7 ) 9548-9553 2020年5月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated the self-oriented growth of ytterbium silicate films at high deposition rates using laser chemical vapor deposition (laser CVD). β-Yb2Si2O7, X1-Yb2SiO5, and X2-Yb2SiO5 phases preferred (001)β and (110)β, (100)X1 and (021)X2, and (221)X2 orientations, respectively. The self-oriented growth was associated with crystallographic features, namely the edge-sharing Yb–O polyhedral networks in each phase. Deposition rates of the β-Yb2Si2O7 and X1/X2-Yb2SiO5 films ranged 114–423 and 353–943 μm h−1, respectively. Post annealing implied that β-Yb2Si2O7 and X2-Yb2SiO5 were the stable phases at elevated temperatures and the obtained films maintained their cone-like and columnar structures after annealing at 1673 K in air.

Chemical vapor deposition route to transparent thick films of Eu3+-doped HfO2 and Lu2O3 for luminescent phosphors

S. Matsumoto, A. Ito

Optical Materials Express 10 ( 4 ) 899–906 2020年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Crystal growth from the vapor phase is an alternative to melt solidification and sintering for fabricating optical materials with high melting points and reversible phase transformations. We demonstrated the rapid synthesis of transparent thick films of Eu-doped monoclinic HfO2 (Eu3+:HfO2) and cubic Lu2O3 (Eu3+:Lu2O3) using laser-assisted metal–organic chemical vapor deposition. The transparent single-crystalline films were epitaxially grown on yttria-stabilized zirconia substrates at the deposition rates of 15–20 µm h−1. Under irradiation by ultraviolet light, the Eu3+:HfO2 and Eu3+:Lu2O3 transparent thick films exhibited intense red emissions at 614–615 nm corresponding to the 5D0 → 7F2 transitions of the Eu3+ ions located in asymmetric environments.

その他リンク： https://doi.org/10.1364/OME.386425

Highly self-oriented growth of (020) and (002) monoclinic HfO2 thick films using laser chemical vapor deposition

S. Matsumoto, Y. Kaneda, A. Ito

Ceramics International 46 ( 2 ) 1810-1815 2020年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Monoclinic hafnia (m-HfO2) films were prepared on polycrystalline AlN substrates via thermal and laser chemical vapor deposition (thermal CVD and laser CVD). Highly self-oriented growth of (020) and (002) m-HfO2 films was demonstrated at a high deposition rate. Films prepared using thermal CVD exhibited a porous microstructure and no preferred orientation, whereas those prepared using laser CVD exhibited significant proportions of (020) and (002)-oriented m-HfO2. The (020) and (002) orientations were observed to be as high as 90% and 98%, respectively. The (002)-oriented m-HfO2 film exhibited a columnar structure with a feather-like texture in cross-section, and with a pyramidal faceted surface. Deposition rates of the (002)-oriented m-HfO2 films reached 67 μm h−1, approximately 40 times greater than previously reported, thermal-CVD-grown m-HfO2 films.

Selective self-oriented growth of (200), (002), and (020) δ-WO3 films via metal-organic chemical vapor deposition

A. Ito, Y. Morishita

Materials Letters 258 126817 2020年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated selective self-oriented growth of triclinic tungsten trioxide (δ-WO3) films with (2 0 0), (0 0 2), and (0 2 0) orientations on polycrystalline AlN substrate using metal-organic chemical vapor deposition (MOCVD) by changing W(CO)6 vaporization temperature. At deposition temperatures of 1123–1223 K and total chamber pressure of 0.2 kPa, the orientation of δ-WO3 films changed from (2 0 0) to (0 0 2) to (0 2 0) to (0 0 2) plane as the increase of W(CO)6 precursor vaporization temperature from 333 to 353 to 373 to 393 K. The (2 0 0)-, (0 0 2)-, and (0 2 0)-oriented δ-WO3 films exhibited high deposition rates of 42, 213, and 317 μm h−1, respectively.

Self-oriented growth of (020) MgSiO3-orthopyroxene and (002) α-Mg2SiO4 films using metal-organic chemical vapor deposition

M. Ikai, A. Ito

Ceramics International 45 ( 10 ) 13567-13570 2019年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated metal-organic chemical vapor deposition of single-phase MgSiO3-orthopyroxene (-opx) and α-Mg2SiO4 films, and α-Mg2SiO4–MgO composite films with self-oriented growth on a polycrystalline AlN substrate using Mg acetylacetonate and tetraethyl orthosilicate precursors. We obtained (020)-oriented MgSiO3-opx films, (002)-oriented α-Mg2SiO4 films, and (021)-oriented α-Mg2SiO4–(200) MgO composite films at 22, 46, and 81 mol%MgO, respectively, at a deposition temperature of 1200 K and a total chamber pressure of 0.8 kPa. Maximum deposition rates of 42 and 131 μm h−1 were attained for the (020)-oriented MgSiO3-opx and (002)-oriented α-Mg2SiO4 films, respectively.

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

M. Ishizawa, H. Fujishiro, T. Naito, A. Ito, T. Goto

Japanese Journal of Applied Physics 57 ( 2 ) 025502 2018年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

T. Hara, H. Fujishiro, T. Naito, A. Ito, T. Goto

Japanese Journal of Applied Physics 56 ( 12 ) 125503 2017年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Electrical resistivity anomaly, valence shift of Pr ion and magnetic behavior in epitaxial (Pr1−yYy)1− xCaxCoO3 thin films under compressive strain

H. Fujishiro, Y. Noda, K. Akuzawa, T. Naito, A. Ito, T. Goto, M. Marysko, Z. Jirak, J. Hejtmanek, K … 全著者表示

Journal of Applied Physics 121 ( 11 ) 115104 2017年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed Epitaxial Growth of (110) SrTiO3 Films on (110) MgAl2O4 Substrates using Laser Chemical Vapour Deposition

J. Chen, A. Ito, T. Goto

Materials Today: Proceedings 4 ( 11 ) 11461-11464 2017年10月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Laser assisted chemical vapor deposition of nanostructured NaTaO3 and SrTiO3 thin films for efficient photocatalytic hydrogen evolution

A.M. Huerta-Flores, J. Chen, L.M. Torres-Martinez, A. Ito, E. Moctezuma, T. Goto

Fuel 197 ( 1 ) 174-185 2017年6月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed deposition of oriented orthorhombic NaTaO3 films using laser chemical vapor deposition

A.M. Huerta-Flores, J. Chen, A. Ito, L.M. Torres-Martinez, E. Moctezuma, T. Goto

Materials Letters 184 257–260 2016年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated the high-speed laser chemical vapor deposition of orthorhombic NaTaO3 (o-NaTaO3) films. The orientation of the o-NaTaO3 films was changed from (101) to (112) to (001) plane as the increase of deposition temperature from 823 to 913 K. o-NaTaO3 films had faceted surfaces and columnar cross sections. The deposition rates of o-NaTaO3 films were 48-120 gm h(-1), which are 192-6000 times higher than those offered by wet-chemical routes. (C) 2016 Elsevier B.V. All rights reserved.

Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO(110) single-crystal substrate by laser chemical vapor deposition

D.Y. Guo, Y. Ju, A. Ito, T. Goto, C.B. Wang, Q. Shen, R. Tu, Z. Huang, L.M. Zhang

Ceramics International 42 ( 9 ) 11464–11467 2016年7月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

BaTi2O5 (BT2) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature (T-dep), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at T-dep=956 K had dielectric constant (epsilon') of 67 and dielectric loss (tan delta) of 0.015, while the (511)-oriented BT2 thick film deposited at T-dep=964 K had epsilon' of 74 and tan delta of 0.019 at 300 K and 1 MHz. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

High-speed epitaxial growth of SrTiO3 films on MgO substrates by laser chemical vapor deposition

J. Chen, A. Ito, T. Goto

Ceramics International 42 ( 8 ) 9981–9987 2016年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Epitaxial (100) and (111) SrTiO3 films were prepared on (100) and (111) MgO single-crystal substrates, respectively, using laser chemical vapor deposition. The effect of deposition temperature (T-dep) on the orientation and microstructure of the SrTiO3 films was investigated. On the (100) MgO substrates, SrTiO3 films showed a (111) orientation at a low T-dep of 1023 K. (100) SrTiO3 films, which were epitaxially grown at T-dep=1123-1203 K, had dense cross sections and flat surfaces with rectangular-shaped terraces. On the (111) MgO substrates, (111) SrTiO3 films were epitaxially grown at T-dep=983-1063 K; however, these films' orientations became random at high T-dep of 1063-1113 K. The (111) SrTiO3 films consisted of columnar grains with triangular pyramidal caps. The deposition rates of the epitaxial (100) and (111) SrTiO3 films were 13-25 and 18-32 mu m h(-1), respectively, which is 5-530 times higher than those obtained by MOCVD. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Laser oscillation and luminescence of Nd3+- and Eu3+-doped Lu2O3 transparent ceramics fabricated by spark plasma sintering

A. Ito, L.Q. An, T. Goto

Journal of the Ceramic Society of Japan 124 ( 4 ) 313–320 2016年4月 [査読有り] [招待有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Luminescence and scintillation properties of Lu3Al5O12 nanoceramics sintered by SPS method

J. Pejchal, V. Babin, A. Beitlerova, R. Kucerkova, D. Panek, J. Barta, V. Cuba, A. Yamaji, S. Kuros … 全著者表示

Optical Materials 53 54–63 2016年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Ce-doped lutetium aluminum garnet Lu3Al5O12 (LuAG) nanoceramics were fabricated at 1600 degrees C and 1700 degrees C by spark-plasma sintering (SPS) method from nano-powders prepared by radiation synthesis. Both undoped and Ce-doped LuAG ceramic samples were also prepared from the nano-powders at 1700 degrees C with significantly increased pre-heating rate. The backscattered electron images revealed large amount of pores in all the Ce-doped samples causing their significant opacity. On the other hand, very large grains and no pores were revealed in the undoped sample, which was the only transparent one. The radioluminescence measurements revealed superior overall scintillation efficiency of the samples sintered at the temperature 1700 degrees C, and their defect emission in the UV region was ascribed to oxygen-vacancy-related defects such as F+ centers. The photoluminescence decay of the defect emission was characterized by an extremely fast decay time of a few nanoseconds. Influence of sintering procedure and subsequent annealing on the luminescence and scintillation properties is discussed. (C) 2016 Elsevier B.V. All rights reserved.

レーザーCVD法によるTiO2膜の歯科材料への応用

桃沢　愛、且井　宏和、伊藤　暁彦、後藤　孝

粉体および粉末冶金 63 ( 3 ) 128–131 2016年3月 [査読有り]

DOI

記述言語：日本語掲載種別：研究論文（学術雑誌）出版者・発行元：一般社団法人粉体粉末冶金協会共著

その他リンク： https://www.jstage.jst.go.jp/article/jjspm/63/3/63_128/_article/-char/ja/

Electrical resistivity anomaly in (Pr1-yMy)1-xCaxCoO3 epitaxial films (M=Y, Gd) fabricated by pulsed laser deposition

Y. Noda, H. Fujishiro, T. Naito, A. Ito, T. Goto, J. Hejtmanek, Z. Jirak

AIP Advances 6 025318 2016年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Assignment of Yb3+ energy levels in the C2 and C3i centers of Lu2O3 sesquioxide either as ceramics or as crystal

Y. Guyot, M. Guzik, G. Alombert-Goget, J. Pejchal, A. Yoshikawa, A. Ito, T. Goto, G. Boulon

Journal of Luminescence 170 ( 2 ) 513–519 2016年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Spectroscopy of C3i and C2 sites of Nd3+-doped Lu2O3 sesquioxide either as ceramics or crystal

M. Guzik, G. Alombert-Goget, Y. Guyot, J. Pejchal, A. Yoshikawa, A. Ito, T. Goto, G. Boulon

Journal of Luminescence 169 ( B ) 606–611 2016年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

2H-SiC Films Grown by Laser Chemical Vapor Deposition

A. Ito, H. Kanno, T. Goto

Journal of the European Ceramic Society 35 ( 16 ) 4611–4615 2015年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated the synthesis of 2H-SiC films on graphite and (0001) sapphire substrates by laser chemical vapor deposition. A tris(dimethylamino) silane was used as a novel precursor for the synthesis of SiC films in a CH4 atmosphere. The 2H-SiC films were obtained at a deposition temperature of 920 K on the sapphire substrate. The films comprised a-axis-oriented columnar grains and their in-plane orientation relationship was [1000] 2H-SiC // [0001] sapphire and [0001] 2H-SiC // [1000] sapphire. The films were deposited at the rate of 182 mu m h(-1). (C) 2015 Elsevier Ltd. All rights reserved.

High-speed deposition of highly (001)-oriented SrCO3 films prepared using laser chemical vapor deposition

J. Chen, A. Ito, T. Goto

Ceramics International 41 ( 9 ) 11810–11814 2015年11月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Highly (001)-oriented SrCO3 films were prepared using laser chemical vapor deposition. The degree of (001) orientation of the SrCO3 films increased from 60% to 100% as the deposition temperature increased from 848 to 923 K. The surface morphology of the (001)-oriented SrCO3 film was characterized by polygonal grains with striped facets, and pyramidal grains formed on the surface. The deposition rate increased as the deposition temperature increased, and the maximum deposition rate of the highly (001)-oriented SrCO3 film was 205 mu m h(-1). (C) 2015 Elsevier Ltd and Team Group S.r.l. All rights reserved.

High-speed Deposition of Tetragonal-ZrO2-dispersed SiO2 Nanocomposite Films by Laser Chemical Vapor Deposition

L.F. Xu, A. Ito, T. Goto

Materials Letters 154 85–89 2015年9月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Tetragonal-ZrO2 (t-ZrO2)-dispersed amorphous SiO2 composite films were prepared by laser chemical vapor deposition at high deposition rates of 40-300 mu m h(-1). Without SiO2 the films prepared at deposition temperatures of 869-1246 K contained monoclinic ZrO2. ZrO2 was stabilized in its tetragonal phase in an amorphous SiO2 matrix at deposition temperatures of 867-1170 K. The t-ZrO2 particle size decreased from 21 to 11 nm with increasing deposition temperature. In the amorphous SiO2 matrix, t-ZrO2 nanoparticles formed a network structure at lower deposition temperatures, whereas the t-ZrO2 nanoparticles were homogeneously dispersed at higher deposition temperatures. (C) 2015 Elsevier B.V. All rights reserved.

A feather-like structure of β-Al2TiO5 film prepared by laser chemical vapor deposition

A. Ito, S. Nishigaki, T. Goto

Journal of the European Ceramic Society 35 ( 7 ) 2195–2199 2015年7月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition

R. Hashimoto, A. Ito, T. Goto

Ceramics International 41 ( 5 ) 6898–6904 2015年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

beta-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H-2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H-2 atmosphere, (111)-oriented beta-SiC films consisting of submicron-sized grains were grown at 1273-1473 K, while carbon was codeposited with the beta-SiC films grown at 1573-1673 K. In an Ar atmosphere, amorphous Si-C-O films were grown at 1073-1373 K, while (111)-oriented beta-SiC films that did not contain free carbon were grown at 1473-1723 K. The deposition rates of the (111)-oriented beta-SiC films were 1500-2000 mu m h(-1). (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Synthesis of pseudobrookite titanium oxynitride Ti3-δO4N films by laser chemical vapor deposition

A. Ito, H.-S. Joo, T.-S. Kim, T. Goto

Vacuum 116 121–123 2015年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of γ-Al2O3 films by laser chemical vapor deposition

M. Gao, A. Ito, T. Goto

Applied Surface Science 340 160–165 2015年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effects of film thickness on the electrical properties of YBa2Cu3O7-δ films grown on a multilayer-coated Hastelloy C276 tape by laser CVD

P. Zhao, A. Ito, T. Goto

Journal of Electroceramics 34 ( 2–3 ) 137–141 2015年5月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Spark plasma sintering of TiN-TiB2-hBN composites and their properties

M. Kitiwan, A. Ito, T. Goto

Ceramics International 41 ( 3 ) 4498–4503 2015年4月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

TiN-TiB2-hBN composites (where hBN denotes hexagonal boron nitride) were prepared by spark plasma sintering at 1973 K for 300 s under 100 MPa. The hBN content was varied from 0 to 30% of the total volume of the composite, while maintaining a TiN:TiB2 ratio of 30:70 vol%. The effects of hBN content on the densification, microstructure, mechanical properties and thermal conductivities of the composites were investigated. Regardless of hBN content, TiN-TiB2-hBN composites showed high relative densities (96-97%). At the optimal hBN content (15 vol%), the composites also showed high hardness and fracture toughness (20.1 GPa and 4.3 MPa m(1/2), respectively), and their thermal conductivity increased from 58.1 to 63.4 W m(-1) K-1 as the temperature was increased from 293 to 973 K. In contrast, the thermal conductivity of most ceramics decreases with increasing temperature. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Nd3+-doped Lu2O3 transparent sesquioxide ceramics elaborated by the Spark Plasma Sintering (SPS) method. Part 1: Structural, thermal conductivity and spectroscopic characterization

G. Alombert-Goget, Y. Guyot, M. Guzik, G. Boulon, A. Ito, T. Goto, A.Yoshikawa, M. Kikuchi

Optical Materials 41 ( SI ) 3–11 2015年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We report the detailed analysis of both structural characterization by SEM, thermal conductivity of high value and high resolution spectroscopic properties of Nd3+-doped Lu2O3 transparent ceramics fabricated by the non-conventional SPS method. The emission spectra of the main C-2 site shows two close F-4(3/2) -> I-4(11/2) laser lines at 1076.3 and 1080.5 nm, respectively. The optical properties of the two C-2 and C-3i sites and of C-2-C-3i; and C-2-C-2 Nd3+ pairs have especially been analyzed. (C) 2014 Elsevier B.V. All rights reserved.

Nd3+-doped Lu2O3 transparent sesquioxide ceramics elaborated by the Spark Plasma Sintering (SPS) method. Part 2: First laser output results and comparison with Nd3+-doped Lu2O3 and Nd3+-Y2O3 ceramics elaborated by a conventional method

G. Toci, M. Vannini, M. Ciofini, A. Lapucci, A. Pirri, A. Ito, T. Goto, A. Yoshikawa, A. Ikesue, G. … 全著者表示

Optical Materials 41 ( SI ) 12–16 2015年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We report the first demonstration of laser oscillation of two 1080.5 nm using a 1% Nd3+-doped Lu2O3 transparent ceramics Plasma Sintering (SPS) method. A comparison is made with ceramics elaborated by HIP conventional method. close IR emission lines at 10763 nm and fabricated by the non-conventional Spark Nd3+-doped Lu2O3 and Nd3+-doped Y2O3 (C) 2014 Elsevier B.V. All rights reserved.

Densification and mechanical properties of cBN-TiN-TiB2 composites prepared by spark plasma sintering of SiO2-coated cBN powder

M. Kitiwan, A. Ito, J. Zhang, T. Goto

Journal of the European Ceramic Society 34 ( 15 ) 3619–3626 2014年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

cBN-TiN-TiB2 composites were fabricated by spark plasma sintering at 1773-1973 K using cubic boron nitride (cBN) and SiO2-coated cBN (cBN(SiO2)) powders. The effect of SiO2 coating, cBN content and sintering temperature on the phase composition, densification and mechanical properties of the composites was investigated. SiO2 coating on cBN powder retarded the phase transformation of cBN in the composites up to 1873 K and facilitated viscous sintering that promoted the densification of the composites. Sintering at 1873 K, without the SiO2 coating, caused the relative density and Vickers hardness of the composite to linearly decrease from 96.2% to 79.8% and from 25.3 to 4.4 GPa, respectively, whereas the cBN(SiO2)-TiN-TiB2 composites maintained high relative density (91.0-96.2%) and Vickers hardness (17.9-21.0 GPa) up to 50 vol% cBN. The cBN(SiO2)-TiN-TiB2 composites had high thermal conductivity (60 W m(-1) K-1 at room temperature) comparable to the TiN-TiB2 binary composite. (C) 2014 Elsevier Ltd. All rights reserved.

Orientation control and electrical properties of YBa2Cu3O7-δ deposited onto CeO2 buffer films by laser chemical vapor deposition using liquid source precursors

P. Zhao, A. Ito, T. Goto

Thin Solid Films 564 ( 1 ) 92–96 2014年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Highly transparent Nd3+:Lu2O3 produced by spark plasma sintering and its laser oscillation

L.Q. An, A. Ito, J. Zhang, D. Tang, T. Goto

Optical Materials Express 4 ( 7 ) 1420–1426 2014年7月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Laser oscillation was demonstrated using a 1 at.% Nd3+-doped Lu2O3 (Nd3+:Lu2O3) transparent ceramic produced by spark plasma sintering. Nd2O3, Lu2O3, and LiF commercial powders were mixed by ball milling and were sintered at 1723 K using a two-step sintering profile. After the transparent Nd3+: Lu2O3 ceramic was annealed in air, its transmittance at 1076 nm reached 81.8%, which was close to the theoretical value for Lu2O3 (82.2%). The absorption cross-section at 806 nm was 1.29 x 10(-20) cm(2), and the fluorescence decay time at 1076 nm was 229 mu s. The laser oscillation of Nd3+: Lu2O3 ceramic for the transition from F-4(3/2) to I-4(11/2)-specifically, at 1076.7 and 1080.8 nm-was simultaneously obtained, with a laser output of 0.21 W and slope efficiency of 14%. (C) 2014 Optical Society of America

Effect of LiF addition on spark plasma sintering of transparent Nd-doped Lu2O3 bodies

L.Q. An, A. Ito, T. Goto

Journal of Asian Ceramic Societies 2 ( 2 ) 154–158 2014年6月 [査読有り]

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記述言語：英語掲載種別：研究論文（学術雑誌）共著

Structural Investigations of Lu2O3 as Single Crystal and Polycrystalline Transparent Ceramic

M. Guzik, J. Pejchal, A. Yoshikawa, A. Ito, T. Goto, M. Siczek, T. Lis, G. Boulon

Crystal Growth & Design 14 ( 7 ) 3327–3334 2014年5月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

The X-ray single crystal structure determination of Lu2O3 sesquioxide and of polycrystalline transparent ceramic fabricated by the unconventional spark plasma sintering (SPS) method is presented for the first time. High quality single crystals of Lu2O3 samples were obtained by using both the micropulling-down (mu-PD) method and the laser heated pedestal growth (LHPG) technique. The SPS method is promising for obtaining high-density ceramics with fine grains at a relatively low temperature within a short holding time. The structural characterizations helped to complete information about the cubic structure of Lu2O3 sesquioxide, not clear until now in the literature from only polycrystalline samples and has raised doubts among many researchers.

Effect of laser wavelength on phase and microstructure of TiO2 films prepared by laser chemical vapor deposition

M. Gao, A. Ito, T. Goto

Surface and Coatings Technology 244 ( 15 ) 166–172 2014年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Rutile and anatase TiO2 films were prepared by laser chemical vapor deposition using CO2 and Nd:YAG lasers. The effects of laser wavelength on the phase, orientation, and microstructure of these TiO2 films were investigated. Using a CO2 laser, single-phase rutile TiO2 films were obtained at 826-1225 K. These films showed a (100) orientation and a dense structure. The highest deposition rate was 83 mu M h(-1) at 1070 K. Using a Nd:YAG laser, the phase of the TiO2 films changed from rutile to anatase with increasing deposition temperature from 852 to 1230 K. The rutile TiO2 films showed a (100) orientation with a columnar structure, while the anatase TiO2 films exhibited a (001) orientation with a cauliflower-like structure. Using a Nd:YAG laser, the highest deposition rates for rutile and anatase TiO2 films were 142 and 40 mu m h(-1), respectively. (C) 2014 Elsevier B.V. All rights

Spark plasma sintering of TiN-TiB2 composites

M. Kitiwan, A. Ito, T. Goto

Journal of the European Ceramic Society 34 ( 2 ) 197–203 2014年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

TiN-TiB2 composites were fabricated by spark plasma sintering at 1773-2573 K. Effects of TiN and TiB2 content on relative density, microstructure, and mechanical properties were investigated. Above 2373 K, TiN-TiB2 composites exhibited relative densities over 95%. A high density of 99.7% was obtained at 2573 K with 20-30 vol% TiB2. Shrinkage of the TiN-70 vol% TiB2 composite was the highest at 1573-2473 K. For the TiN-70 vol% TiB2 composite prepared at 1973-2373 K, TiN grains were small, while at 2573 K, TiB2 became a continuous matrix, in which irregular-shaped TiN dispersed. hBN was formed in the TiN-TiB2 composite containing 50-60 vol% TiB2 above 2373 K. The maximum Vickers hardness and fracture toughness obtained for the TiN-80 vol% TiB2 composite sintered at 2473 K was 26.3 GPa and 4.5 MPa m(1/2), respectively. (C) 2013 Elsevier Ltd. All rights reserved.

Scintillation Properties of Nd-doped Lu2O3 in the Visible and Infrared Regions

S. Kurosawa, L.Q. An, A. Yamaji, A. Suzuki, Y. Yokota, K. Shirasaki, Y. Tomoo, A. Ito, T. Goto, G. … 全著者表示

IEEE Transactions on Nuclear Science 61 ( 1 ) 316–319 2014年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of (100) CeO2 and (110) YBa2Cu3O7-δ films by laser chemical vapor deposition

P. Zhao, A. Ito, T. Goto

Ceramics International 40 ( 1 ) 605–609 2014年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent anatase and rutile TiO2 films grown by laser chemical vapor deposition

A. Ito, T. Sato, T. Goto

Thin Solid Films 551 ( 31 ) 37–41 2014年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent single-crystal TiO2 films were grown on (001) SrTiO3 substrate by laser chemical vapor deposition. (001) anatase, (101) anatase, and (110) rutile TiO2 films were epitaxially grown at 1230, 1448, and 1500 K, respectively. The in-plane epitaxial orientation relations were [100] anatase TiO2//[100] SrTiO3 in the (001) anatase TiO2//(001) SrTiO3 film, [010] anatase TiO2//[100] SrTiO3 in the (101) anatase TiO2//(001) SrTiO3 film, and [001] rutile TiO2//[100] SrTiO3 in the (110) rutile//(001) SrTiO3 film. The TiO2 films were highly transparent at the visible to near-infrared range. A high transmittance of 98% was observed for the (001) anatase TiO2 film at a wavelength of 800 nm. (C) 2013 Elsevier B.V. All rights reserved.

Preparation of Al2O3-ZrO2 nanocomposite films by laser chemical vapor deposition

A. Ito, Y. You, T. Ichikawa, K. Tsuda, T. Goto

Journal of the European Ceramic Society 34 ( 1 ) 155–159 2014年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Alumina (Al2O3)-zirconia (ZrO2) nanocomposite films were prepared by laser chemical vapour deposition. alpha-Al2O3-ZrO2 and gamma-Al2O3-t-ZrO2 nanocomposite films were prepared at 1207 and 1000 K, respectively. In the nanocomposite films, 10-nm-wide t-ZrO2 nanodendrites grew inside the alpha- or gamma-Al2O3 columnar grains. The gamma-Al2O3-t-ZrO2 nanocomposite films exhibited high nanoindentation hardness (28.0 GPa) and heat insulation efficiency (4788 J s(-1/2) m(-2) K-1). (C) 2013 Elsevier Ltd. All rights reserved.

Effect of deposition temperature on the orientation and electrical properties of YBa2Cu3O7-δ films prepared by laser CVD using liquid-source evaporation

P. Zhao, A. Ito, T. Goto

Ceramics International 40 ( 1 ) 2057–2061 2014年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Growth and microstructure of Ba β-alumina films by laser chemical vapor deposition

A. Ito, Y. You, H. Katsui, T. Goto

Journal of the European Ceramic Society 33 ( 13–14 ) 2655–2661 2013年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Laser chemical vapor deposition of single-crystalline transparent CeO2 films

P. Zhao, A. Ito, T. Goto

Surface and Coatings Technology 235 273–276 2013年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Single-crystalline transparent CeO2 films were prepared on (100) SrTiO3 single-crystal substrates by laser Chemical vapor deposition. At deposition temperatures ranging from 952 to 1080 K, epitaxial (100) CeO2 films grew as columnar grains, which resulted in opaque films. The epitaxial CeO2 film prepared at 1120 K exhibited a flat surface and dense cross section. The epitaxial CeO2 films grown on SrTiO3 substrates showed coherent lattice matching at the interface, even at high deposition rates of 15-25 mu m h(-1). The epitaxial relationship was CeO2 [100]//SrTiO3 [100] and CeO2 [011]//SrTiO3 [001]. The epitaxial CeO2 film prepared at 1120 K was a highly transparent single-crystalline film, and the transmittance at a wavelength of 600 nm reached 97% of the SrTiO3 substrate. (C) 2013 Elsevier B.V. All rights reserved.

Effects of laser power on the growth of polycrystalline AlN films by laser chemical vapor deposition method

Y. You, A. Ito, R. Tu, T. Goto

Surface and Coatings Technology 232 ( 15 ) 1–5 2013年10月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Polycrystalline aluminum nitride (AlN) films were prepared by laser chemical vapor deposition method using aluminum acetylacetonate and ammonia as source materials. The effects of deposition conditions on the crystal phase, composition and microstructure were investigated. Polycrystalline AlN films were prepared at a laser power above 100 W and a deposition temperature above 803 K. The microstructure of AlN film changed from aggregated grains to faceted grains to pyramidal grains with increasing laser power and with decreasing total pressure. (C) 2013 Elsevier B.V. All rights reserved.

Highly (001)-oriented α-Al2O3 films prepared by laser chemical vapor deposition

Y. You, A. Ito, T. Goto

Materials Letters 106 11–13 2013年9月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Rapid deposition of YBCO films by laser CVD and effect of lattice mismatch on their epitaxial growth and critical temperature

P. Zhao, A. Ito, T. Goto

Ceramics International 39 ( 7 ) 7491–7497 2013年9月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

a-Axis- and c-axis-oriented YBa2Cu3O7-delta (YBCO) films were grown on (100) SrTiO3 substrate by laser chemical vapour deposition (laser CVD). The effect of lattice mismatch between films and substrates on in-plane and out-of-plane crystallinity and critical temperature (Tc) was investigated. The preferred orientation changed from a-axis to c-axis as the deposition temperature increased from 928 to 1049 K. The c-axis-oriented YBCO showed a minimum of full width at half maximum of 0.5 degrees for the omega-scan and 1.0 degrees for the (phi-scan. A smaller mismatch between YBCO films and substrates led a higher crystallinity for in-plane and out-of-plane epitaxial growths. A high T-C a 90 K was obtained for the c-axis-oriented YBCO films. The deposition rate of the YBCO films was 58-101 mu m h(-1), approximately 60-1000 times higher than that of conventional CVD. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Optical and scintillation properties of Sc2O3, Y2O3 and Lu2O3 transparent ceramics synthesized by SPS method

Y. Futami, T. Yanagida, Y. Fujimoto, J. Pejchal, M. Sugiyama, S. Kurosawa, Y. Yokota, A. Ito, A. Yo … 全著者表示

Radiation Measurements 55 ( SI ) 136–140 2013年8月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Sc2O3, Y2O3 and Lu2O3 transparent ceramics were prepared by the spark plasma sintering (SPS) method. After polishing, the samples were semitransparent. Their optical transmittance was 10-40% at 500 nm which corresponded with their semi-transparency. In the X-ray induced emission spectra, a broad emission peak appeared around 335 nm in each sample. For this wavelength,, scintillation decay time for Y2O3 and Sc2O3 were 22 and 48 ns, respectively. The light yield of Sc2O3, Y2O3 and Lu2O3 was 16,200, 2600, and 200 ph/5.5 MeV-alpha, respectively, which followed from the alpha-ray induced pulse height spectra. The gamma-ray induced light yield of Sc2O3 was 11,500 ph/MeV, which is 1.4 times larger than that of conventional single crystal BGO (Bi4Ge3O12) scintillator. Light yield non-proportionality and energy resolution of Sc2O3 were examined for the first time. (C) 2013 Elsevier Ltd. All rights reserved.

High-Jc YBa2C3O7-δ superconducting film grown by laser-assisted chemical vapor deposition using a single liquid source and its microstructure

P. Zhao, A. Ito, T. Kato, D. Yokoe, T. Hirayama, T. Goto

Superconductor Science and Technology 26 095016 2013年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effect of laser power on electrical conductivity of BaTi5O11 films prepared by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C. Wang, Q. Shen, L. Zhang

Journal of Materials Science: Materials in Electronics 24 ( 6 ) 1941–1946 2013年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

BaTi5O11 films were prepared on Pt/Ti/SiO2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (P (L)) on the electrical conductivity of the BaTi5O11 films was investigated. The electrical resistivity of the grains was much higher than that of the grain boundaries, which indicated that the electrical conductivity along the grain boundary was dominant. For the BaTi5O11 films, the conduction was mainly attributed to oxygen vacancies, and the electrical conductivity was strongly affected by their microstructures and the concentration of the charge carriers. With increasing the P (L), the grain size increased and the grain-boundary density decreased, which resulted in the decrease of the electrical conductivity. At the same time, the increase of T (dep) led to higher concentration of charge carriers, which resulted in the increase of electrical conductivity.

Preparation of TiO2-rich Ba-Ti-O thick films by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C. Wang, Q. Shen, L. Zhang

Journal of Advanced Ceramics 2 ( 2 ) 167–172 2013年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

TiO2-rich Ba-Ti-O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios m(Ti/Ba) = 1.84-1.90, 2.83 and 4.49-4.55, respectively. The high deposition rate of TiO2-rich Ba-Ti-O films ranged from 54.0 mu m/h to 177.6 mu m/h. The permittivity of BaTi2O5 film (prepared at m(Ti/Ba) = 1.84 and deposition temperature T-dep = 877 K), Ba4Ti13O30 film (prepared at m(Ti/Ba) = 2.83 and T-dep = 914 K) and BaTi5O11 film (prepared at m(Ti/Ba) = 4.49 and T-dep = 955 K) were 50, 40 and 21, respectively.

Preparation of rutile TiO2 thin films by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C. Wang, Q. Shen, L. Zhang

Journal of Advanced Ceramics 2 ( 2 ) 162–166 2013年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

TiO2 thin films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD) method. The effects of laser power (P-L) and total pressure (p(tot)) on the microstructure of TiO2 thin films were investigated. The deposition temperature (T-dep) was mainly affected by P-L, increasing with P-L increasing. The single-phase rutile TiO2 thin films with different morphologies were obtained. The morphologies of TiO2 thin films were classified into three typical types, including the powdery, Wulff-shaped and granular microstructures. p(tot) and T-dep were the two critical factors that could be effectively used for controlling the morphology of the films.

Microstructure and dielectric response of (111)-oriented tetragonal BaTiO3 thick films prepared by laser chemical vapor deposition

D.Y. Guo, A. Ito, R. Tu, T. Goto

Journal of Asian Ceramic Societies 1 ( 2 ) 197–201 2013年6月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of TiO2 thick film by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C. Wang, Q. Shen, L. Zhang

Journal of Materials Science: Materials in Electronics 24 ( 6 ) 1758–1763 2013年6月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (R (dep) = 11.4 mu m h(-1)). At 300 K and 1 MHz, the dielectric constant (epsilon (r)) and loss (tan delta) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300-873 K) and frequency (10(2)-10(7) Hz). The Cole-Cole plots between real and imaginary parts of the impedance (Z' and Z'') in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.

High-speed growth of YBa2Cu3O7-δ superconducting films on multilayer-coated Hastelloy C276 tape by laser-assisted MOCVD

P. Zhao, A. Ito, T. Kato, D. Yokoe, T. Hirayama, T. Goto

Superconductor Science and Technology 26 055020 2013年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Fabrication of transparent Lu2Hf2O7 by reactive spark plasma sintering

L.Q. An, A. Ito, T. Goto

Optical Materials 35 ( 4 ) 817–819 2013年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent Lu2Hf2O7 body was first prepared by reactive spark plasma sintering using Lu2O3 and HfO2 powders. The Lu2Hf2O7 body sintered at 1723 K for 2.7 ks had an average grain size of 230 nm. The transmittance reached 78% at 2000 nm after annealing at 1123 K for 21.6 ks. (C) 2012 Elsevier B.V. All rights reserved.

Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor

Y. You, A. Ito, R. Tu, T. Goto

Journal of Crystal Growth 365 1–5 2013年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230K. AlN film prepared at 1047K showed an epitaxial relation as (0001)(AlN)//(0001)(Al2O3,) [11-20](AlN)//[10-10](Al2O3). The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature. (C) 2012 Elsevier B.V. All rights reserved.

Effect of laser power on orientation and microstructure of TiO2 films prepared by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C. Wang, Q. Shen, L. Zhang

Materials Letters 93 179–182 2013年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent Lu3NbO7 bodies prepared by reactive spark plasma sintering and their optical and mechanical properties

L.Q. An, A. Ito, T. Goto

Ceramics International 39 ( 1 ) 383–387 2013年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent lutetium niobate (Lu3NbO7) bodies were prepared by reactive spark plasma sintering using Lu2O3 and Nb2O5 powders. Fully dense Lu3NbO7 bodies with density greater than 99.5% of the theoretical were obtained at 1300-1650 degrees C. The grains steadily grew from 0.1 to 0.6 mu m with increasing sintering temperature from 1200 to 1450 degrees C and significant grain growth from 2.2 to 9.2 mu m occurred at 1550-1650 degrees C. The Lu3NbO7 body sintered at 1450 degrees C showed the highest transmittance of 63% at 550 nm after heat treatment at 850 degrees C in air for 6 h. Fully dense, submicron-size transparent Lu3NbO7 exhibited Vickers hardness of similar to 13.0 GPa and indentation fracture toughness of 1.0 MPa m(1/2). (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

B deficiency in TiB2 and B solid solution in TiN in TiN-TiB2 composites prepared by spark plasma sintering

M. Kitiwan, A. Ito, T. Goto

Journal of the European Ceramic Society 32 ( 16 ) 4021–4024 2012年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Dense TiN-TiB2 composites were prepared by spark plasma sintering at 2573 K using TiN and TiB2 powders. With increasing TiN content from 60 to 90 vol%, the c-axis length of TiB2 in the TiN-TiB2 composites decreased from the stoichiometric value (0.3230 nm) to 0.3227 nm because of B deficiency in TiB2, whereas the a-axis length of TiB2 was unchanged from the stoichiometric value of 0.3031 nm. The lattice parameter of TiN increased from the stoichiometric value (0.4243 nm) to 0.4250 nm with increasing TiB2 content from 0 to 60 vol% because of B solid solution in TiN. (C) 2012 Elsevier Ltd. All rights reserved.

Basic study of Eu2+-doped garnet ceramic scintillator produced by spark plasma sintering

M. Sugiyama, T. Yanagida, Y. Fujimoto, Y. Yokota, A. Ito, M. Nikl, T. Goto, A. Yoshikawa

Optical Materials 35 ( 2 ) 222–226 2012年12月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We report a new discovery of Eu2+-doped bulk garnet ceramic scintillators based on reduction of Eu3+ ions without additives. Eu2+-doped Y3Al5O12 and Lu3Al5O12 ceramics were prepared by spark plasma sintering (SPS) method. Using SPS, the green and blue luminescence was observed under UV lamp excitation for Eu2+-doped Y3Al5O12 and Lu3Al5O12 ceramics, respectively. Under excitation by Am-241 alpha-ray the Eu2+ 5d-4f emission was observed in radioluminescence spectra both samples. For the first time, scintillation response due to Eu2+ 5d-4f luminescence was observed in the bulk garnet oxide materials. In addition, Eu-doped Al2O3 prepared by SPS showed Eu2+ 5d-4f emission in the radioluminescence spectrum. It is confirmed that Al is a key element to reduce Eu3+ as well as highly reductive condition in SPS. (C) 2012 Elsevier B.V. All rights reserved.

High-speed Epitaxial Growth of BaTi2O5 Thick Films and Their In-plane Orientations

D.Y. Guo, A. Ito, R. Tu, T. Goto

Applied Surface Science 259 178–185 2012年10月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Epitaxial BaTi2O5 (BT2) thick films were prepared on (1 0 0), (1 1 0) and (1 1 1) MgO single-crystal substrates by laser chemical vapor deposition. (0 1 0)- and (1 1 2)-oriented BT2 thick films grew epitaxially on (1 0 0) and (1 1 0) MgO substrates at deposition temperatures of 1326-1387 K and 1324-1383 K, respectively. On the (1 1 1) MgO substrate, BT2 thick film showed (3 1 (3) over tilde) and (1 1 (3) over tilde) co-orientations at 1337-1353 K. Epitaxial BT2 thick films had a columnar structure in cross-section and the deposition rate reached 42 mu m h(-1). The typical in-plane orientations of the epitaxial BT2 films were BT2 [2 0 (1) over bar]//MgO [0 (1) over bar 0] for BT2 (0 1 0)//MgO (1 0 0), BT2 [2 0 (1) over bar]//MgO [0 0 1] for BT2 (1 1 2)//MgO (1 1 0), BT2 [1 0 1]//MgO [0 (1) over bar 1] for (3 1 (3) over bar) BT2//MgO (1 1 1), and BT2 [3 0 1]//MgO [0 1 (1) over bar] for (1 1 (3) over bar) BT2//MgO (1 1 1). (C) 2012 Elsevier B. V. All rights reserved.

Scintillation characteristics of undoped Sc2O3 single crystals and ceramics

A. Fukabori, L.Q. An, A. Ito, V. Chani, K. Kamada, T. Goto, A. Yoshikawa

IEEE Transactions on Nuclear Science 59 ( 5 ) 2594–2600 2012年10月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Detailed scintillation properties of Sc2O3, especially gamma-ray response, are not well studied because of low density and low effective atomic number of this compound. They are reported in this paper. Sc2O3 single crystals grown by the micro-pulling-down method and Sc2O3 translucent ceramics produced by the spark plasma sintering are analyzed. Optical, luminescence, and scintillation properties of these single- and poly-crystalline solids are discussed and compared based on examination of their optical transmittance, radio-luminescence spectra, light yields under gamma-ray excitation, non-proportionality, energy resolution, and scintillation decay profiles. Spectrally corrected light yields of the Sc2O3 single crystals and Sc2O3 ceramics were approximately 7,700 and 19,200 photons/MeV, respectively.

Effect of sintering temperature on the transparency and mechanical properties of lutetium aluminum garnet fabricated by spark plasma sintering

L.Q. An, A. Ito, T. Goto

Journal of the European Ceramic Society 32 ( 12 ) 3097–3102 2012年9月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent lutetium aluminum garnet (Lu3Al5O12, LuAG) was fabricated by reactive spark plasma sintering. The effect of sintering temperature on the crystal phase, microstructure, transparency and mechanical properties of LuAG bodies was investigated. Fully dense and single-phase LuAG bodies were obtained at sintering temperatures 1573-1923 K. The average grain size increased from 0.18 to 0.52 mu m with increasing sintering temperature from 1573 to 1773 K, and grain growth became significant at 1823 K. Transmittance showed a maximum value of 77.8% at 2000 nm at a sintering temperature of 1773 K after annealing at 1423 K in air for 43.2 ks. The Vickers hardness increased from 14.2 to 17.2 GPa with decreasing grain size from 7.45 to 0.23 mu m. (c) 2012 Elsevier Ltd. All rights reserved.

Preparation of (020)-oriented BaTi2O5 thick films and their dielectric responses

A. Ito, D.Y. Guo, R. Tu, T. Goto

Journal of the European Ceramic Society 32 ( 10 ) 2459–2467 2012年8月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Barium dititanate (BaTi2O5) thick films were prepared on a Pt-coated Si substrate by laser chemical vapor deposition, and ac electric responses of (0 2 0)-oriented BaTi2O5 films were investigated using several equivalent electric circuit models. BaTi2O5 films in a single phase were obtained at a Ti/Ba molar ratio (m(Ti/Ba)) of 1.72-1.74 and deposition temperature (T-dep) of 908-1065 K as well as m(Ti/Ba) = 1.95 and T-dep = 914-953 K. (0 2 0)-oriented BaTi2O5 films were obtained at m(Ti/Ba) = 1.72-1.74 and T-dep = 989-1051 K. BaTi2O5 films had columnar grains, and the deposition rate reached 93 mu m h(-1). The maximum relative permittivity of the (0 2 0)-oriented BaTi2O5 film prepared at T-dep = 989 K was 653 at 759 K. The model of an equivalent circuit involving a parallel combination of a resistor, a capacitor, and a constant phase element well fitted the frequency dependence of the interrelated ac electrical responses of the impedance, electric modulus, and admittance of (0 2 0)-oriented BaTi2O5 films. (C) 2012 Elsevier Ltd. All rights reserved.

Effect of calcination temperature on fabrication of transparent lutetium titanate by spark plasma sintering

L.Q. An, A. Ito, T. Goto

Ceramics International 38 ( 6 ) 4973–4977 2012年8月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent lutetium titanate (Lu2Ti2O7) bodies were fabricated by spark plasma sintering using Lu2O3 and TiO2 powders calcined from 700 degrees C to 1200 degrees C. No solid-state reaction was identified after calcination at 700 degrees C, whereas single-phase Lu2Ti2O7 powder was prepared at 1100 and 1200 degrees C. The calcination at 700 degrees C promoted densification at the early stages of sintering, whereas residual pores at grain boundaries resulted in Lu2Ti2O7 bodies with low transparency. Low-density and opaque Lu2Ti2O7 bodies formed owing to the coarsening of the powder calcined at 1200 degrees C. The Lu2Ti2O7 body sintered using the powder calcined at the moderate temperature of 1100 degrees C had a density of 99.5% with the highest transmittances of 41% and 74% at wavelengths of 550 nm and 2000 nm, respectively. (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Preparation of Ti(O,N) Films by Laser Chemical Vapor Deposition for Functionally Gradient Coating on Ti(C,N)-based Cermet

T. Yonesaki, A. Ito, T. Goto

Journal of the Japan Society of Powder and Powder Metallurgy 59 ( 7 ) 405–409 2012年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Microstructure and hardness of SiC-TiC nanocomposite thin films prepared by radiofrequency magnetron sputtering

G. Osugi, A. Ito, M. Hotta, T. Goto

Thin Solid Films 520 ( 18 ) 5851–5855 2012年7月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Silicon carbide-titanium carbide (SiC-TiC) nanocomposite thin films were prepared by radiofrequency magnetron sputtering using SiC-TiC composite targets fabricated by spark plasma sintering. The SiC thin films were amorphous at substrate temperatures below 573 K and crystallized in the cubic crystal system (3C) at substrate temperatures greater than 773 K. Cubic SiC-TiC nanocomposite thin films, which contain a mixture of 3C-SiC and B1-TiC phases, were obtained at a TiC content of greater than 20 mol%. The amorphous films possessed a dense cross-section and a smooth surface. The morphology of the SiC-TiC nanocomposite thin films changed from granular to columnar with increasing substrate temperature. The SiC-TiC nanocomposite thin films prepared at TiC content of 70-80 mol% and substrate temperature of 573 K showed the highest hardness of 35 GPa. (C) 2012 Elsevier B.V. All rights reserved.

Transparent yttria produced by spark plasma sintering at moderate temperature and pressure profiles

L.Q. An, A. Ito, T. Goto

Journal of the European Ceramic Society 32 ( 5 ) 1035–1040 2012年5月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent yttria (Y2O3) bodies were fabricated by spark plasma sintering, and the effects of the sintering temperature on relative density, microstructure, and the optical and mechanical properties of Y2O3 bodies were investigated. Fully dense Y2O3 bodies were obtained at sintering temperatures 1473-1873 K. The average grain size was 0.24-0.32 mu m at 1473-1573 K, and steadily increased to 1.97 mu m with an increase in temperature to 1823 K. The highest transmittance was obtained in the Y2O3 body sintered at 1573 K and annealed at 1323 K, showing 81.7% (99% of the theoretical value) at a wavelength of 2000 nm. (C) 2011 Elsevier Ltd. All rights reserved.

Effect of laser power on microstructure and dielectric properties of BaTi5O11 films prepared by laser chemical vapor deposition method

D.Y. Guo, A. Ito, T. Goto, R. Tu, C.B. Wang, Q. Shen, L. Zhang

Journal of Materials Science: Materials in Electronics 23 ( 11 ) 1961–1964 2012年5月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

BaTi5O11 films were prepared on Pt/Ti/SiO2/Si substrates by a laser chemical vapor deposition method. The effect of laser power (P (L)) on microstructure and dielectric properties of the BaTi5O11 films was investigated. With increasing P (L) from 62 to 108 W, the deposition temperature (T (dep)) monotonously increased from 872 to 951 K. At T (dep) = 920 K (P (L) = 90 W), the BaTi5O11 film had preferred orientation. At T (dep) a parts per thousand yen 938 K (P (L) a parts per thousand yen 98 W), the preferred orientation changed to . The deposition rate (R (dep)) was 154.8-177.6 mu m h(-1). With increasing T (dep), the surface morphologies changed from rectangular to pyramidal, and the dielectric constant (epsilon (r)) increased from 18.3 to 21.4 at 1 MHz and 300 K.

Correlation between crystal grain sizes of transparent ceramics and scintillation light yields

A. Fukabori, L.Q. An, A. Ito, V. Chani, K. Kamada, A. Yoshikawa, T. Ikegami, T. Goto

Ceramics International 38 ( 3 ) 2119–2123 2012年4月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of c-axis-oriented Y2Ba4Cu7O15-δ Films by Laser CVD with Ultrasonically Nebulized Precursor

A. Ito, M. Sato, T. Goto

Key Engineering Materials 508 207–210 2012年3月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and Their Microstructure

D.Y. Guo, A. Ito, R. Tu, T. Goto

Key Engineering Materials 508 199–202 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Ba2TiO4 and Ba4Ti13O30 thick films were prepared by laser chemical vapor deposition using Ba- and Ti-dipivaloylmethanate precursors. Single-phase Ba2TiO4 thick films were obtained at 845-946 K and Ba/Ti source molar ratio 2.4. Single-phase Ba4Ti13O30 films were obtained at 944-1011 K and Ba/Ti source molar ratio 0.38. Ba2TiO4 thick films consisted of truncated grains, while Ba4Ti13O30 thick films had shellfish-like grains. Ba2TiO4 and Ba4Ti13O30 thick films showed a columnar growth and their deposition rates were 72 and 132 mu m h(-1), respectively.

Growth of b-axis-oriented BaTi2O5 Nanopillars by Laser Chemical Vapor Deposition

D.Y. Guo, A. Ito, R. Tu, T. Goto

Key Engineering Materials 508 185–188 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

b-axis-oriented BaTi2O5 nanopillars were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition using Ba and Ti dipivaloylmethanate precursors. b-axis-oriented BaTi2O5 nanopillars were approximately 250-400 nm in width and 2.5 mu m in height. Deposition rate of BaTi2O5 nanopillar arrays was about 75 mu m h(-1).

Phase Transformation and Densification of hBN-TiN Composites Fabrication by Spark Plasma Sintering

M. Kitiwan, A. Ito, T. Goto

Key Engineering Materials 508 52–55 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

hBN-TiN binary composite was fabricated using spark plasma sintering (SPS) at temperatures between 1973 and 2273 K. With increasing TiN content from 10 to 90 vol%, the relative density increased from 75.7 to 96.4%. The maximum relative density of 96.4% was achieved in the hBN-TiN containing 90 vol%TiN sintered at 2273 K. hBN and TiN was stably coexisted at 1973 K without TiB2 formation.

Densification and Microstructure of Monolithic TiN and TiB2 Fabricated by Spark Plasma Sintering

M. Kitiwan, A. Ito, T. Goto

Key Engineering Materials 508 38–41 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Sintering behavior of monolithic TiN and TiB2 was investigated using spark plasma sintering (SPS) at temperatures between 1673 and 2573 K. Relative density of TiN was increased from 82.3 to 96.7% while that of TiB2 increased from 70.1 to 92.8% with increasing temperature. At temperatures between 1673 and 2273 K, TiB2 was more difficult to consolidate compare to TiN. At 2473 K, TiB2 densified rapidly to 92.8%.

Effect of Precursor Supply on (100) and (001) Orientations of α-Al2O3 Film Prepared by Laser CVD

K. Hokuto, A. Ito, T. Kimura, T. Goto

Key Engineering Materials 508 3–6 2012年3月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Preparation of Ba-Ti-O films by Laser Chemical Vapor Deposition

A. Ito, D.Y. Guo, R. Tu, T. Goto

Materials Chemistry and Physics 133 ( 1 ) 398–404 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Ba-Ti-O films were prepared on Pt-coated Si substrate by laser chemical vapor deposition, and their orientations and microstructures were compared. Ba2TiO4, BaTiO3, BaTi2O5, Ba4Ti13O30 and BaTi4O9 single-phase films were prepared at Ti to Ba molar ratio from 0.41 to 3.49. The alpha'-Ba2TiO4 film showed (010) and (091) co-orientation with elongated, truncated columnar grains. The BaTiO3 film was composed of triangular and hexagonal grains with slight (111) orientation. The BaTi2O5 film had (010) orientation and faceted columnar grains. The Ba4Ti13O40 film showed (1 0 0) and (0 1 2) co-orientation with shellfish-like grains. The BaTi4O9 film showed (0 1 0) orientation with slightly rounded faceted columnar grains. The deposition rates of Ba-Ti-O films ranged from 30 to 144 mu m h(-1). (C) 2012 Elsevier B.V. All rights reserved.

Preparation of Titania Solid Films by Laser CVD using CO2 Laser

M. Gao, A. Ito, R. Tu, T. Goto

Key Engineering Materials 508 279–282 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Titania (TiO2) films having dense and solid microstructure were prepared by laser chemical vapor deposition using CO2 laser. The effects of deposition temperature (T-dep) and total chamber pressure (P-tot) on phase and microstructure of TiO2 films were investigated. At P-tot = 600 Pa and T-dep = 790 K, rutile TiO2 film had a polygonal platelet grains 2 mu m in size. At P-tot = 600 Pa and T-dep = 1010 K, rutile TiO2 film had (110) orientation and consisted of a truncated polyhedron 5-6 mu m in size. At P-tot = 200 Pa and T-dep = 955 K, rutile TiO2 film has a solid columnar having faceted surface. A dense and solid TiO2 film was obtained at P-tot, = 200 Pa and T-dep = 1120 K. The deposition rate of TiO2 solid film was reached 240 mu m h(-1).

Microcolumnar and Granular Structures of TiO2 Films Prepared by Laser CVD using Nd:YAG Laser

M. Gao, A. Ito, R. Tu, T. Goto

Key Engineering Materials 508 287–290 2012年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Microcolumar and granular TiO2 films were prepared by laser chemical vapor deposition using Nd:YAG laser. Effects of deposition temperature on phase and microstructure were investigated. Single-phase rutile TiO2 films were prepared at 760-936 K, whereas mixtures of rutile and anatase TiO2 films were obtained at 975-1014 K. Single-phase anatase TiO2 films were prepared at 1067 K. Rutile TiO2 films prepared at 899-936 K showed feather-like microcolumnars with a pyramidal cap. Anatase TiO2 films prepared at 1067 K consisted of granular grains. Deposition rates were ranged from 3 to 50 mu m h(-1).

Dielectric properties of Ba4Ti13O30 film prepared by laser chemical vapor deposition

D.Y. Guo, A. Ito, T. Goto, R. Tu, C.B. Wang, Q. Shen, L. Zhang

Journal of Materials Science 47 ( 3 ) 1559–1561 2012年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Rh-nanoparticle-dispersed ZrO2 films prepared by laser chemical vapor deposition

A. Honda, T. Kimura, A. Ito, T. Goto

Surface and Coatings Technology 206 ( 11–12 ) 3006–3010 2012年2月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Rhodium-nanoparticle-dispersed zirconia (Rft/ZrO2) films were prepared by laser chemical vapor deposition using Rh and Zr dipivaloylmethanate precursors. The effects of deposition conditions and heat treatment on the microstructures of ZrO2 and Rh/ZrO2 films were investigated. At a deposition temperature of 1180 K and a Rh to Zr source molar ratio (R-Rh/Zr) of 0.05, Rh nanoparticles precipitated on the surface of a (020)-oriented ZrO2 matrix having a feather-like structure. The diameter of the Rh nanoparticles increased from 25 to 70 nm as R-Rh/Zr increased from 0.01 to 0.10. The microstructure of the Rh nanoparticles and the feather-like structure of the ZrO2 matrix were unchanged after heat treatment at 873 K in air for 10 h. (C) 2011 Elsevier B.V. All rights reserved.

Preparation of LaRuO3 Films by Microwave Plasma-enhanced Chemical Vapor Deposition

M. Kimura, A. Ito, T. Kimura, T. Goto

Thin Solid Films 520 ( 6 ) 1847–1850 2012年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

LaRuO3 films were prepared by microwave plasma-enhanced chemical vapor deposition, and the effects of La/Ru supply ratio (R-La/Ru) and microwave power (P-M) on phase and microstructure were investigated. Amorphous films of carbonate or hydroxide of La were formed without microwave irradiation. At R-La/Ru<1.0, RuO2 films were obtained independent of P-M. At R-La/Ru = 1.6-3.2 and P-M = 0.6-1.2 kW (deposition temperatures of 973-998 K), LaRuO3 single phase films were prepared. A product mixture of La2RuO5 and (beta-La3RuO7 was obtained at R-La/Ru =4 and P-M = 1.2 kW, while a mixture of RuO2 and La4.87Ru2O12 was formed at R-La/Ru = 4.6 and P-M = 0.6 kW. LaRuO3 single phase films showed metallic conduction with a high electrical conductivity of 1.6 x 10(4) S m(-1) at room temperature. (C) 2011 Elsevier B.V. All rights reserved.

Effects of sintering and annealing temperature on fabrication of transparent Lu2Ti2O7 by spark plasma sintering

L.Q. An, A. Ito, T. Goto

Journal of the American Ceramic Society 94 ( 11 ) 3851–3855 2011年11月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Fabrication of transparent Lu3NbO7 by spark plasma sintering

L.Q. An, A. Ito, T. Goto

Materials Letters 65 ( 19–20 ) 3167–3169 2011年10月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

We demonstrated the first successful fabrication of a transparent Lu3NbO7 body by spark plasma sintering (SPS). First. Lu3NbO7 powder was synthesized by a solid-state reaction of Lu2O3 and Nb2O5 powders at 1473 K for 7.2 ks and was sintered by SPS at 1723 K for 2.7 ks. The transparent Lu3NbO7 body had a cubic defect-fluorite structure and uniform microstructure with an average grain size of 0.77 mu m. The transmittance at 550 nm reached 68%. (C) 2011 Elsevier B.V. All rights reserved.

Effects of ball milling and post-annealing on the transparency of spark plasma sintered Lu2O3

L.Q. An, A. Ito, T. Goto

Ceramics International 37 ( 7 ) 2263–2267 2011年9月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

The effects of ball milling of starting powder and post-annealing of spark plasma sintered (SPSed) Lu2O3 on its microstructure and optical property were investigated. When ball-milled powder was used, the SPSed Lu2O3 was found to have a larger grain size with wider distribution and lower transparency than in the case using powder without ball milling. After annealing at 1323 K in air, the Lu2O3 that was SPSed using ball-milled powder became colorless, had a higher transmittance in the visible spectrum than the case where as-received powder was used, and exhibited transmittances of 71.4% and 81.6% for wavelengths of 550 and 2000 nm, respectively. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Two-step pressure sintering of transparent lutetium oxide by sparking plasma sintering

L.Q. An, A. Ito, T. Goto

Journal of the European Ceramic Society 31 ( 9 ) 1597–1602 2011年8月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent lutetium oxide (Lu(2)O(3)) body was prepared by spark plasma sintering using a two-step pressure profile combined with a low heating rate. The effects of pre-load pressures from 10 to 100 MPa and heating rates from 0.03 to 1.67 Ks(-1) on the microstructures and optical properties were investigated. With increasing pre-load pressures from 10 to 100 MPa, the grains became smaller with a narrower distribution, whereas the transmittance showed maxima at 30 MPa. The average grain size slightly increased from 0.67 to 0.86 mu m as the heating rate increased from 0.03 to 1.67 Ks(-1), while the transmittance decreased. Transmittances of 60% at 550 nm and 79% at 2000 nm were obtained under a pre-load pressure of 30 MPa at a heating rate of 0.17 Ks(-1). (C) 2011 Elsevier Ltd. All rights reserved.

(006)-oriented α-Al2O3 films prepared in CO2-H2 atmosphere by laser chemical vapor deposition using a diode laser

Y. You, A. Ito, R. Tu, T. Goto

Materials Science and Engineering: B 176 ( 13 ) 984–989 2011年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Deposition of α-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser

Y. You, A. Ito, R. Tu, T. Goto

Journal of the Ceramic Society of Japan 119 ( 7 ) 570–572 2011年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of α-Al2O3/TiN Multilayer Coating on Ti(C,N)-Based Cermet by Laser CVD

Y. You, A. Ito, R. Tu, T. Goto

Key Engineering Materials 484 188–191 2011年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Ternary Phase Relation on Preparation of YBa2Cu3O7-δ Films by Laser CVD

P. Zhao, A. Ito, R. Tu, T. Goto

Key Engineering Materials 484 183–187 2011年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Effect of NH3 Atmosphere on Preparation of Al2O3-AlN Composite Film by Laser CVD

Y. You, A. Ito, R. Tu, T. Goto

Key Engineering Materials 484 172–176 2011年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Fabrication of Transparent La2Zr2O7 by Reactive Spark Plasma Sintering

L.Q. An, A. Ito, T. Goto

Key Engineering Materials 484 135–138 2011年7月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Transparent La2Zr2O7 with cubic pyrochlore structure was first fabricated by reactive spark plasma sintering using commercially available La2O3 and ZrO2 powders. Single phase of pyrochlore La2Zr2O7 was obtained at a sintering temperature of 1673 K and sintering pressure at 100 MPa for 2.7 ks. The La2Zr2O7 sintered body had a uniform grain size of 1.5 mu m and exhibited 68% transmittance in the wavelength range of 4-6 mu m.

High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Surface and Coatings Technology 205 ( 16 ) 4079–4082 2011年5月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

(100)-oriented CeO2 film was prepared on r-cut sapphire ((1 $(1) over bar $ 02)Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182W with deposition temperatures ranging from 1042 to 1122 K. The (100) CeO2 films grew epitaxially on (1 $(1) over bar $ 02)Al2O3 substrate with the in-plane orientation relationship of CeO2 [010]//Al2O3 [(1) over bar 101] and CeO2 [001]//Al2O3 [11 $(2) over bar $0]. The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10-15 mu m h(-1), about 10-15 times higher than those of conventional metalorganic CVD. (C) 2011 Elsevier B.V. All rights reserved.

Laser chemical vapor deposition of TiN film on Ti(C, N)-based cermet substrate using Ti(OiPr)2(dpm)2-NH3 system

Y. You, A. Ito, R. Tu, T. Goto

Journal of the Ceramic Society of Japan 199 ( 4 ) 310–313 2011年4月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

TiN films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition using titanium isopropoxide dipivaloylmethane [Ti(OiPr)(2)(dpm)(2)] and ammonia (NH3) as precursors. The effects of deposition temperature (T-dep) and laser power (P-L) on the crystal phase, microstructure and adhesion were investigated. TiN film was prepared at T-dep > 903 K (P-L > 100W). The microstructure of TiN film changed from rose-like grains to pyramid-like grains to aggregate grains with increasing P-1, and T-dep. Highly adhesive film was obtained at moderate T-dep = 1047 K (P-L = 120W). (C) 2011 The Ceramic Society of Japan. All rights reserved.

Fabrication of Transparent Lutetium Oxide by Spark Plasma Sintering

L.Q. An, A. Ito, T. Goto

Journal of the American Ceramic Society 94 ( 3 ) 695–698 2011年3月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent lutetium oxide bodies were fabricated by spark plasma sintering. The effects of sintering temperature, applied pressure, and holding time on the density, microstructure, and transmittance of these bodies were investigated. Nearly fully dense specimens were fabricated at above 1573 K and 100 MPa for 2.7 ks or at 1673 K and above 40 MPa for 2.7 ks. The grain size and transmittance steadily increased with increasing sintering temperature from 1273 to 1723 K and abnormal grain growth occurred above 1723 K, resulting in a decrease of density and transparency.

Fast epitaxial growth of a-axis- and c-axis-oriented YBa2Cu3O7-δ films on (100) LaAlO3 substrate by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Applied Surface Science 257 ( 9 ) 4317–4320 2011年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Highly transparent lutetium titanium oxide produced by spark plasma sintering

L.Q. An, A. Ito, T. Goto

Journal of the European Ceramic Society 31 ( 1–2 ) 237–240 2011年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Transparent Lu(2)Ti(2)O(7) pyrochlore was fabricated by reactive sintering using spark plasma sintering at 1723 K for 45 min The sintered body exhibited 72% transmittance at a wavelength of 2000 nm and 40% transmittance at 550 nm The average grain size was 14 5 mu m with uniform microstructure (C) 2010 Elsevier Ltd All rights reserved

Dome-like and dense SiC-SiO2 nanocomposite films synthesized by laser chemical vapor deposition using CO2 laser

S. Yu, A. Ito, R. Tu, T. Goto

Surface and Coatings Technology 205 ( 8–9 ) 2818–2822 2011年1月 [査読有り]

DOI Web of Science

記述言語：英語掲載種別：研究論文（学術雑誌）共著

SIC-SiO2 nanocomposite films were prepared by laser chemical vapor deposition (LCVD) using a CO2 laser; tetraethyl orthosilicate and acetylene were used as precursors. An amorphous phase was formed at a deposition temperature below 1650K, whereas a SiC (3 C) crystalline phase was co-deposited with amorphous SiO2 at a deposition temperature above 1650 K. Dome-like deposits were observed when low total pressure and high temperature were applied. At higher total pressure and lower temperature, the SiC-SiO2 nanocomposite film was obtained, with SiC grains about 10 nm in diameter distributed in amorphous SiO2. The highest deposition rate was 374 mu m h(-1) at 1675 K and 400 Pa. (C) 2010 Elsevier B.V. All rights reserved.

Eggshell- and Fur-like Microstructures of Yttria Silicate Film Prepared by Laser Chemical Vapor Deposition

A. Ito, J. Endo, T. Kimura, T. Goto

Materials Chemistry and Physics 125 ( 1–2 ) 242–246 2011年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed growth of YBa2Cu3O7-δ film with high critical temperature on MgO single crystal substrate by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Superconductor Science and Technology 23 ( 12 ) 125010 2010年12月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

SiC-SiO2 nanocomposite films prepared by laser CVD using tetraethyl orthosilicate and acetylene as precursors

S. Yu, R. Tu, A. Ito, T. Goto

Materials Letters 64 ( 20 ) 2151–2154 2010年10月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Generation of hollow scalar and vector beams using a spot-defect mirror

A. Ito, Y. Kozawa, S. Sato

Journal of the Optical Society of America A 27 ( 9 ) 2072–2077 2010年9月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

その他リンク： https://doi.org/10.1364/JOSAA.27.002072

High-Speed Deposition of Y-Si-O Films by Laser Chemical Vapor Deposition Using Nd:YAG laser

A. Ito, J. Endo, T. Kimura, T. Goto

Surface and Coatings Technology 204 ( 23 ) 3846–3850 2010年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Applied Surface Science 256 ( 21 ) 6395–6398 2010年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Surface and Coatings Technology 204 ( 21–22 ) 3619–3622 2010年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Laser Chemical Vapor Deposition of SiC Films with CO2 laser

K. Fujie, A. Ito, R. Tu, T. Goto

Journal of Alloys and Compounds 502 ( 1 ) 238–242 2010年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Orientation control of α-Al2O3 films prepared by laser chemical vapor deposition using a diode laser

Y. You, A. Ito, R. Tu, T. Goto

Journal of the Ceramic Society of Japan 118 ( 5 ) 366–369 2010年5月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Low temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser

Y. You, A. Ito, R. Tu, T. Goto

Applied Surface Science 256 ( 12 ) 3906–3911 2010年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Moderate temperature and high-speed synthesis of α-Al2O3 films by laser chemical vapor deposition using Nd:YAG laser

H. Kadokura, A. Ito, T. Kimura, T. Goto

Surface and Coatings Technology 204 ( 14 ) 2302–2306 2010年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Amorphous-like nanocrystalline γ-Al2O3 films prepared by MOCVD

A. Ito, R. Tu, T. Goto

Surface and Coatings Technology 204 ( 14 ) 2170–2174 2010年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed Deposition of Dense, Dendritic and Porous SiO2 Films by Nd:YAG Laser Chemical Vapor Deposition

J. Endo, A. Ito, T. Kimura, T. Goto

Materials Science and Engineering: B 166 ( 3 ) 225–229 2010年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Generation of Cylindrical Vector Beams of a Single Higher Order Transverse Mode

A. Ito, Y. Kozawa, S. Sato

Advanced Solid-State Photonics, OSA Technical Digest Series AMB20 2010年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Texture and orientation characteristics of α-Al2O3 films prepared by laser chemical vapor deposition using Nd:YAG laser

A. Ito, H. Kadokura, T. Kimura, T. Goto

Journal of Alloys and Compounds 489 ( 2 ) 469–474 2010年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

High-speed preparation of c-axis-oriented YBa2Cu3O7-δ film by laser chemical vapor deposition

P. Zhao, A. Ito, R. Tu, T. Goto

Materials Letters 64 ( 1 ) 102–104 2010年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Characterization of alkaline earth metals ruthenate thin films

A. Ito, H. Masumoto, T. Goto, S. Sato

Journal of the European Ceramic Society 30 ( 2 ) 435–440 2010年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Fabrication of platinum particles by intense, femtosecond laser pulse irradiation of aqueous solution

T. Nakamura, K. Takasaki, A. Ito, S. Sato

Applied Surface Science 255 ( 24 ) 9630–9633 2009年9月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effect of Lattice Matching on Microstructure and Electrical Conductivity of Epitaxial ARuO3 (A = Sr, Ca and Ba) Thin Films Prepared on (001) LaAlO3 Substrates by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Thin Solid Films 517 ( 19 ) 5616–5620 2009年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Selective TM01 and TE01 Mode Operation of Nd:YAG Laser Based on Cavity Stability Incorporating Thermal Effects

A. Ito, Y. Kozawa, S. Sato

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest Series JThE2 2009年5月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Fabrication of Gold-Platinum Nanoparticles by Intense, Femtosecond Laser Irradiation of Aqueous Solution

T. Nakamura, H. Magara, Y. Herbani, A. Ito, S. Sato

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest Series JWA2 2009年5月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Selective oscillation of radially and azimuthally polarized laser beam induced by thermal birefringence and lensing

A. Ito, Y. Kozawa, S. Sato

Journal of the Optical Society of America B 26 ( 4 ) 708–712 2009年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Epitaxial Growth of BaRuO3 Thin Films on MgO Substrates by Laser Ablation

A. Ito, H. Masumoto, T. Goto, S. Sato

Journal of the Ceramic Society of Japan 117 ( 4 ) 426–430 2009年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effect of Ba Substitution on the Microstructure and Electrical Conductivity of BaxCa1-xRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 49 ( 8 ) 1822–1825 2008年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Effect of Ba Substitution on the Microstructure and Electrical Conductivity of BaxSr1-xRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Journal of the Ceramic Society of Japan 116 ( 3 ) 441–444 2008年3月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Microstructure and Electrical Conductivity of CaRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 49 ( 1 ) 158–165 2008年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Microstructure and Electrical Conductivity of BaRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 48 ( 11 ) 2953–2959 2007年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Microstructure and Electrical Conductivity of Epitaxial CaRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Journal of the Ceramic Society of Japan 115 ( 11 ) 683–687 2007年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Morphology of Epitaxially Grown BaRuO3 and CaRuO3 Thin Films by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Key Engineering Materials 352 315–318 2007年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Microstructure and Electrical Conductivity of Epitaxial BaRuO3 Thin Films Prepared on (001), (110) and (111) SrTiO3 Substrates by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 48 ( 7 ) 1919–1923 2007年7月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Characterization of calcium titanate thin films deposited on titanium with reactive sputtering and pulsed laser depositions

N. Ohtsu, A. Ito, K. Saito, T. Hanawa

Surface and Coatings Technology 201 ( 18 ) 7686–7691 2007年6月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Preparation of BaRuO3 and BaIrO3 Films by Laser Ablation

H. Masumoto, A. Ito, Y. Kaneko, T. Goto

Key Engineering Materials 336–338 730–734 2007年4月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Microstructure and Electrical Conductivity of Epitaxial SrRuO3 Thin Films Prepared on (001), (110) and (111) SrTiO3 Substrates by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 48 ( 2 ) 227–233 2007年2月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

Microstructure and Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 47 ( 11 ) 2808–2814 2006年11月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

レーザーアブレーション法によるSrRuO3薄膜の作製と傾斜構造電極としての応用

A. Ito, H. Masumoto, T. Goto

2004年度傾斜機能材料論文集 2004 103–108 2005年3月 [査読有り]

記述言語：日本語掲載種別：研究論文（研究会，シンポジウム資料等）共著

Electrical conductivity of SrRuO3 thin films prepared by laser ablation

A. Ito, H. Masumoto, T. Goto

Materials Science Forum 475–479 1209–1212 2005年1月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（国際会議プロシーディングス）共著

Optical properties of Au Nanoparticle Dispersed TiO2 Films Prepared by Laser Ablation

A. Ito, H. Masumoto, T. Goto

Materials Transactions 44 ( 8 ) 1599–1603 2003年8月 [査読有り]

DOI

記述言語：英語掲載種別：研究論文（学術雑誌）共著

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