INOUE Fumihiro

Affiliation

Institute for Multidisciplinary Sciences

Job Title

Professor

Research Fields, Keywords

Unit processes for 3D integration, advanced packaging

Web Site

https://inoue.ynu.ac.jp/en/

Related SDGs




 https://orcid.org/0000-0003-2292-846X

写真a

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Degree 【 display / non-display 】

  • Doctor of Engineering - Kansai University

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Campus Career 【 display / non-display 】

  • 2026.4
    　
    　

    Duty   Yokohama National UniversityInstitute for Multidisciplinary Sciences   Professor  

  • 2021.4
    -
    2026.3

    Duty   Yokohama National UniversityFaculty of Engineering   Division of Systems Research   Associate Professor  

  • 2026.4
    　
    　

    Concurrently   Yokohama National UniversityInstitute of Advanced Sciences   Professor  

  • 2026.4
    　
    　

    Concurrently   Yokohama National UniversityInstitute for Multidisciplinary Sciences   Professor  

  • 2024.4
    -
    2026.3

    Concurrently   Yokohama National UniversityInstitute for Multidisciplinary Sciences   Associate Professor  

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External Career 【 display / non-display 】

  • 2011.3
    -
    2014.10

    imec  

  • 2013.4
    -
    2014.10

    Tohoku University   Special researcher of the Japan Society for the Promotion of Science  

  • 2014.10
    -
    2021.3

    imec   Researcher  

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Books 【 display / non-display 】

  • Exploring Bond Strength for Advanced Chiplet with Hybrid Bonding

    Fuse, J.; Iwata, T.; Yoshihara, Y.; Sano, M.; Inoue, F.（ Role： Joint author ,  vol28, (1) 39-45）

    Chip Scale Review 

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    Language：English Book type：Scholarly book

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Papers 【 display / non-display 】

  • Thermally stable, low-temperature Si-Si bonding with suppressed void formation for μLHP-integrated 3D ICs

    Jiang, DP; Hashimoto, M; Kurosaki, M; Ueno, A; Sano, M; Inoue, F; Nagano, H; Tada, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   65 ( 16 )   2026.8

    DOI Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • Degradation mechanisms for copper interconnects and approaches to increasing reliability

    Ueno, K; Inoue, F

    JAPANESE JOURNAL OF APPLIED PHYSICS   65 ( 15 )   2026.8

    DOI Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • Surface Chemistry Effects on Bond Wave Dynamics and Distortion-Induced Scaling Errors during Plasma-Activated Direct Bonding of SiCN

    Sato, R; Nagata, A; Ogata, R; Kim, Y; Kim, H; Shin, JH; Myalitsin, A; Inoue, F

    ACS APPLIED ELECTRONIC MATERIALS   8 ( 9 )   4294 - 4303   2026.5

    DOI Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

  • Surface Chemistry Effects on Bond Wave Dynamics and Distortion-Induced Scaling Errors during Plasma-Activated Direct Bonding of SiCN

    Sato Ryosuke, Nagata Atsushi, Ogata Ryota, Kim Youngjun, Kim Haeri, Shin Jong Han, Myalitsin Anton, … Show more authors

    ACS Applied Electronic Materials   8 ( 9 )   4294 - 4303   2026.4

    DOI CiNii Research Repository

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society   Joint Work  

    Hybrid bonding is an important aspect of advanced three-dimensional integration. However, as the Cu pad pitch is scaled down, wafer-scale alignment accuracy becomes increasingly limited due to postbonding in-plane displacement (IPD), which appears as overlay loss and scaling mismatch across the wafer. The present work investigated the factors governing bond-front (that is, bond wave) propagation, wafer-scale distortion, and bond strength during wafer-level direct bonding in association with SiCN films produced using plasma-enhanced chemical vapor deposition. In trials employing N2 or O2 plasma activation, the bonding characteristics were correlated with surface chemical states. The bond-front speed remained nearly unchanged with variations in the plasma conditions, whereas the extent of postbonding IPD increased markedly when using the N2 plasma, indicating a larger risk of field-dependent overlay errors and systematic scaling distortion in conjunction with fine-pitch hybrid bonding. In contrast, the bond strength was maximized by N2 plasma treatment at 100 W. Surface and interface analyses suggested that the N2 plasma generated both −NH and C-based surface groups that promoted interfacial reactions, enabling high bond strength but simultaneously amplifying local reaction-driven distortions. Conversely, the O2 plasma generated a more uniform, SiO2-like surface, leading to bonding with reduced IPD and improved wafer-scale alignment stability, albeit with lower strength than was obtained using the optimal N2 plasma conditions. These results demonstrate a trade-off relationship between strength and alignment rooted in surface chemistry and provide guidelines for the optimization of fine-pitch hybrid bonding for the fabrication of next-generation devices.

  • Assessment of the Indium Chemical Mechanical Polishing Mechanism via Corrosion Analysis

    La, MTN; Otake, Y; Inoue, F

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   173 ( 3 )   2026.2

    DOI Web of Science

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    Language：English   Publishing type：Research paper (scientific journal)   Joint Work  

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Review Papers 【 display / non-display 】

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Awards 【 display / non-display 】

  • 第37回 独創性を拓く 先端技術大賞　経済産業大臣賞

    2024.7   産経新聞社   ハイブリッド接合の開発と省電力チップレット集積技術への適用

    Individual or group name of awards：井上史大

  • 令和６年度科学技術分野の文部科学大臣表彰【若手科学者賞】

    2024.4   文部科学省  

    Individual or group name of awards：井上史大

  • IEEE EPS Outstanding Young Engineer Award

    2022.6   IEEE Electronics Packaging Society  

    Individual or group name of awards：Fumihiro Inoue

  • SEMIスタンダード：2025年テクニカルコミッティー賞

    2026.1   SEMI Japan  

    Individual or group name of awards：井上史大

  • JAFOE2025 Best Speaker Award

    2026.1   Engineering Academy of Japan  

    Individual or group name of awards：Fumihiro Inoue

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Preferred joint research theme 【 display / non-display 】

  • 3D integration

  • Semiconductor manufacturing processes

  • Hybrid bonding

  • CMP

  • Electrochemical deposition

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Charge of on-campus class subject 【 display / non-display 】

  • 2026   Advanced Semiconductor Manufacturing

    Interfaculty Graduate School of Innovative and Practical Studies

  • 2026   Micro and nanofabrication

    Graduate school of Engineering Science

  • 2026   Studio of Process Integration B

    Graduate school of Engineering Science

  • 2026   Studio of Process Integration A

    Graduate school of Engineering Science

  • 2026   Manufacturing of Processing Systems B

    Graduate school of Engineering Science

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Media Coverage 【 display / non-display 】

  • チップレット集積の課題は山積み、うかうかできない日本企業

    日経BP  日経XTECH  2024.2

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    Author：Other 

  • 「後工程から日本の半導体を盛り返したい」…横浜国立大准教授が3D集積技術に挑む

    日刊工業新聞  日刊工業新聞　ニュースイッチ  2024.2

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    Author：Other 

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