KE Mengnan

Affiliation

Institute for Multidisciplinary Sciences

Job Title

Associate Professor

Research Fields, Keywords

電気電子材料工学、半導体デバイス、MOSFET

Web Site

https://mosfet.ynu.ac.jp/



写真a

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Education 【 display / non-display 】

  • 　
    　
    　

    The University of Tokyo   Master Course   Graduated

  • 　
    　
    　

    The University of Tokyo   Doctor Course   Completed

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Degree 【 display / non-display 】

  • Doctor of Engineering - The University of Tokyo

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Campus Career 【 display / non-display 】

  • 2025.1
    　
    　

    Concurrently   Yokohama National UniversityGraduate school of Engineering Science   Department of Mathematics, Physics, Electrical Engineering and Computer Science   Specialization in Electrical and Computer Engineering   Associate Professor  

  • 2025.1
    　
    　

    Duty   Yokohama National UniversityInstitute for Multidisciplinary Sciences   Associate Professor  

  • 2025.4
    　
    　

    Concurrently   Yokohama National UniversityInstitute of Advanced Sciences   Associate Professor  

  • 2025.1
    　
    　

    Concurrently   Yokohama National UniversityCollege of Engineering Science   Department of Mathematics, Physics, Electrical Engineering and Computer Science   Electrical and Computer Engineering Program   Associate Professor  

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External Career 【 display / non-display 】

  • 2021.12
    -
    2024.12

      Assistant Professor  

  • 2018.10
    -
    2021.11

      Assistant Professor  

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Academic Society Affiliations 【 display / non-display 】

  • 2019.1
    　
    　
     

    IEEE

  • 2015.6
    　
    　
     

    応用物理学会

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Research Areas 【 display / non-display 】

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric/electronic material engineering

  • Nanotechnology/Materials / Thin-film surfaces and interfaces

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electronic devices and equipment

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Research Career 【 display / non-display 】

  • 縦型Ge/TMDCヘテロ界面トンネルFETの開発と物理機構の解明

    Grant-in-Aid for Scientific Research  

    Project Year： 2023.4 - 2026.3

  • Ge MOS界面の遅い準位特性解明と密度低減手法確立更なる次世代デバイスへの応用

    Grant-in-Aid for Scientific Research  

    Project Year： 2020.4 - 2023.3

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Papers 【 display / non-display 】

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Awards 【 display / non-display 】

  • 丹羽保次郎記念論文賞

    2024.12   丹羽保次郎記念  

    Individual or group name of awards：柯夢南

  • 安田幸夫賞

    2024.2   第29回電子デバイス界面テクノロジー研究会  

    Individual or group name of awards：小島 拓也，堀場 大輔, 柯 梦南, 青木 伸之

  • 高柳健次郎研究奨励賞

    2024   高柳健次郎財団  

    Individual or group name of awards：柯夢南

  • IEEE TOWERS Supporter's Group Award

    2023.10   第20回IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers  

    Individual or group name of awards：鶴岡大樹、青木伸之、柯夢南

  • IEEE APCCAS 2020 Best Paper Award

    2020.12   16th IEEE Asia Pacific Conference on Circuits and Systems  

    Individual or group name of awards：K. Koike, K.Suzuki, M. Ke, K. Mori, T. Ito and Takayuki Kawahara

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Grant-in-Aid for Scientific Research 【 display / non-display 】

  • ナノ秒パルス伝導解析が拓く２次元ヘテロ構造における非平衡キャリアダイナミクス

    2023.9 - 2027.3

    　 More details

    Authorship：Coinvestigator(s) 

  • 縦型Ge/TMDCヘテロ界面トンネルFETの開発と物理機構の解明

    2023.5 - 2025.3

    Grant-in-Aid for Early-Career Scientists

  • Ge MOS界面の遅い準位特性解明と密度低減手法確立更なる次世代デバイスへの応用

    2020.4 - 2023.3

    Grant-in-Aid for Early-Career Scientists

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    Authorship：Principal investigator 

  • 高性能Ge-MOSFET実現のため高信頼High-k/Geゲートスタック形成技術

    2018.4 - 2020.3

    Grant-in-Aid for JSPS Fellows

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    Authorship：Principal investigator 

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Presentations 【 display / non-display 】

  • MOS Interfaces of Emerging Channel Materials

    M. Ke*  [Invited]

    Conference of Science & Technology for Integrated Circuits (CSTIC), Shanghai, China 

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    Event date： 2026.3

    Language：English   Presentation type：Oral presentation (invited, special)  

  • Application of F6-TCNNQ Deposition on WSe2 to CFET Structure Devices

    松田 健生, 野口 裕士, 榎本 璃玖, 瀬戸 大暉 , 柯 梦南 , 熊谷 翔平, 岡本 敏宏 , 青木 伸之

    第31回電子デバイス界面テクノロジー研究会 

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    Event date： 2026.1

    Language：Japanese   Presentation type：Oral presentation (general)  

  • Effect of Ozone Treatment on Interface Properties in MIS Capacitors and FETs Based on Thin-Film WSe2

    岩崎 天星, 柯 梦南, 青木 伸之

    第31回電子デバイス界面テクノロジー研究会 

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    Event date： 2026.1

    Language：Japanese   Presentation type：Poster presentation  

  • Direct Growth of High-κ Dielectrics on WSe₂ via ALD: Interface Control by UV-O₃ Treatment

    榎本 璃玖, 松田 健生, 柯 梦南, クリューガー ピーター, 青木 伸之

    第31回電子デバイス界面テクノロジー研究会 

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    Event date： 2026.1

    Language：Japanese   Presentation type：Poster presentation  

  • Investigation of Channel Length Effects on Interface Trap Density Extraction in CVD-Grown Monolayer MoS2/Al2O3 MOSFETs Using the Conductance Method

    中村 志穂, 林 早陽, 玉 虓, 青木 伸之, 柯 梦南

    第31回電子デバイス界面テクノロジー研究会 

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    Event date： 2026.1

    Language：Japanese   Presentation type：Poster presentation  

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Charge of on-campus class subject 【 display / non-display 】

  • 2026   Advanced integrated system design F

    Graduate school of Engineering Science

  • 2026   Advanced integrated system design S

    Graduate school of Engineering Science

  • 2026   Colloquium in Integrated Electronics II

    Graduate school of Engineering Science

  • 2026   Colloquium in Integrated Electronics I

    Graduate school of Engineering Science

  • 2026   Colloquium in Electrical and Computer Engineering II

    Graduate school of Engineering Science

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